SCHEMBL2735474

SCHEMBL2735474

CCC(C)(C)C(=O)OC(C)OC(C)C

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL132911 0.83 TSHR (0.40) TSHR
SCHEMBL12892529 0.82
SCHEMBL47419 0.82 MMP8 (0.30)
SCHEMBL15945465 0.81
SCHEMBL16683156 0.81
SCHEMBL15362564 0.81 TSHR (0.32) TSHR
SCHEMBL16591029 0.81
SCHEMBL16591026 0.81
SCHEMBL14258803 0.80 MMP8 (0.33)
SCHEMBL47442 0.80 LMNA (0.42)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180087010-A1 PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-03-29 US disclosed
US-9746771-B2 Laminate body FUJIFILM CORPORATION (JP) 2017-08-29 US disclosed
US-20160170303-A1 LAMINATE BODY FUJIFILM CORPORATION (JP) 2016-06-16 US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 US disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-8709701-B2 Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-04-29 US disclosed
US-8088546-B2 Underlayer coating forming composition for lithography containing naphthalene ring having halogen atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-01-03 US disclosed
US-20110207331-A1 Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-08-25 US disclosed
US-20100022090-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, CONTAINING AROMATIC FUSED RING-CONTAINING RESIN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
US-20070238029-A1 Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-10-11 US disclosed
US-7226721-B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-06-05 US disclosed