SCHEMBL47442

SCHEMBL47442

CCOC(C)OC(=O)C(C)(C)CC

nearest known ligand 0.42

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.42
MMP8 P22894 1/20 0.33
CYP4F2 P78329 1/20 0.31
CYP4A11 Q02928 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14258803 0.88 MMP8 (0.33) MMP8
SCHEMBL14258794 0.85
SCHEMBL11965849 0.85
SCHEMBL2735478 0.85 GRM1 (0.31)
SCHEMBL16683156 0.85
SCHEMBL15697302 0.85 MMP8 (0.31) MMP8
SCHEMBL785931 0.83 LMNA (0.46) LMNAMMP8
SCHEMBL14258812 0.83 CYP4F2 (0.32) LMNACYP4F2CYP4A11
SCHEMBL18789618 0.82 CYP4F2 (0.33) LMNACYP4F2CYP4A11
SCHEMBL18477575 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 348 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20230305403-A1 PATTERN FORMING METHOD, MANUFACTURING METHOD OF CIRCUIT BOARD, AND LAMINATE FUJIFILM CORPORATION (JP) 2023-09-28 US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11703756-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-20230194988-A1 TRANSFER FILM, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR CIRCUIT WIRE, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-06-22 US disclosed
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
US-20090311624-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-17 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed
US-20090148791-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-06-11 US disclosed
US-7435526-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-7419758-B2 Lithographic printing plate precursor and lithographic printing method FUJIFILM CORPORATION (JP) 2008-09-02 US disclosed
US-20080102649-A1 Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-05-01 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070238029-A1 Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-10-11 US disclosed
US-7226721-B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-06-05 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 LMNA 4574/4885MMP8 3988/4885CYP4F2 648/4885
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound RB1, RBBP5, RRM2B LMNA 1483/4885MMP8 4671/4885CYP4F2 2896/4885
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 LMNA 3266/4885MMP8 1902/4885CYP4F2 660/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.