Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.57 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.57 |
| ▸ | GAA | P10253 | 2/20 | 0.57 |
| ▸ | PGR | P06401 | 1/20 | 0.57 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.57 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.57 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.55 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.51 |
| ▸ | MEN1 | O00255 | 1/20 | 0.51 |
| ▸ | RAB9A | P51151 | 1/20 | 0.51 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.51 |
| ▸ | HPGD | P15428 | 2/20 | 0.47 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.46 |
| ▸ | MMP2 | P08253 | 1/20 | 0.46 |
| ▸ | FABP7 | O15540 | 4/20 | 0.44 |
| ▸ | FABP3 | P05413 | 4/20 | 0.44 |
| ▸ | FABP5 | Q01469 | 4/20 | 0.44 |
| ▸ | BCHE | P06276 | 1/20 | 0.44 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.44 |
| ▸ | ELANE | P08246 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7880926 | 0.91 | ALDH1A1 (0.48) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL4059205 | 0.90 | ELANE (0.49) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL37865 | 0.84 | ALDH1A1 (0.65) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL29901836 | 0.84 | ALDH1A1 (0.65) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL28010762 | 0.83 | ALDH1A1 (0.53) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL14087507 | 0.83 | ESR1 (0.47) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL22724977 | 0.82 | ESR1 (0.46) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL1598809 | 0.81 | HSD17B10 (0.67) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL29525161 | 0.81 | HSD17B10 (0.67) | ALDH1A1HSD17B10GAAPGRPTGS1 | |
| SCHEMBL14085554 | 0.81 | ELANE (0.41) | ALDH1A1HSD17B10GAAPGRPTGS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7534547-B2 | Optically active compound and photosensitive resin composition | OSAKA GAS COMPANY LIMITED (JP) | 2009-05-19 | — | — | US | disclosed |
| US-7534547-B2 | Optically active compound and photosensitive resin composition | OSAKA GAS COMPANY LIMITED (JP) | 2009-05-19 | — | — | US | disclosed |
| EP-1441256-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2006-05-31 | — | — | EP | disclosed |
| EP-0789278-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2005-05-04 | — | — | EP | disclosed |
| EP-1441256-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2004-07-28 | — | — | EP | disclosed |
| US-6727032-B1 | USEFUL IN MICRO-PROCESSING USING VARIOUS RADIATIONS, E.G., FAR-ULTRAVIOLET RADIATION SUCH AS KRF EXCIMER LASER OR ARF EXCIMER LASER, X RAYS SUCH AS SYNCHROTRON RADIATION, CHARGED PARTICLE RADIATION SUCH AS ELECTRON BEAM, ETC. | JSR CORPORATION (JP) | 2004-04-27 | — | — | US | disclosed |
| US-20030073027-A1 | Chemical amplification resist compositions and process for the formation of resist patterns | FUJITSU LIMITED (JP) | 2003-04-17 | — | — | US | disclosed |
| US-6200724-B1 | CHEMICAL AMPLIFICATION RESIST COMPRISES AN ALKALI-SOLUBLE BASE RESIN, A PHOTOACID GENERATOR AND A DISSOLUTION INHIBITOR, IN WHICH A CYCLIC STRUCTURE FORMS A MATRIX PORTION CONTAINS ONE LONE PAIR CONTAINING PORTION | FUJITSU LIMITED (JP) | 2001-03-13 | — | — | US | disclosed |
| US-5914219-A | Radiation-sensitive mixture and the production of relief structures having improved contrast | BASF AKTIENGESELLSCHAFT (DE) | 1999-06-22 | — | — | US | disclosed |
| US-5783354-A | QUATERNARY AMMONIUM COMPOUNDS | BASF AKTIENGESELLSCHAFT (DE) | 1998-07-21 | — | — | US | disclosed |
| EP-0789278-A2 | Radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1997-08-13 | — | — | EP | disclosed |
| US-5318876-A | Solutions of water insoluble, base soluble polymeric binder, substituted sulfonium salts, substituted benzenesulfonates, having tolerance for delay between exposure and heating to develop | BASF AKTIENGESELLSCHAFT (DE) | 1994-06-07 | — | — | US | disclosed |
| US-5300400-A | Process for the production of relief patterns and images utilizing an organic compound having at least one acid-cleavable group and a storage stability improving amount of a second organic compound | BASF AKTIENGESELLSCHAFT (DE) | 1994-04-05 | — | — | US | disclosed |
| US-5084371-A | POSITIVE-WORKING, RADIATION-SENSITIVE MIXTURE BASED ON ACID-CLEAVABLE AND PHOTOCHEMICALLY ACID-FORMING COMPOUNDS, AND THE PRODUCTION OF RELIEF PATTERNS AND RELIEF IMAGES | BASF AKTIENGESELLSCHAFT (DE) | 1992-01-28 | — | — | US | disclosed |
| US-5069998-A | RADIATION SENSITIVE MIXTURE AND PRODUCTION OF RELIEF PATTERNS | BASF AKTIENGESELLSCHAFT (DE) | 1991-12-03 | — | — | US | disclosed |
| US-4883740-A | RELIEF PATTERNS AND IMAGES | BASF AKTIENGESELLSCHAFT (DE) | 1989-11-28 | — | — | US | disclosed |