SCHEMBL22724977

SCHEMBL22724977

Cc1cccc2c(OC(=O)OC(C)(C)C)cccc12

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ESR1 P03372 8/20 0.46
▸ ESR2 Q92731 8/20 0.46
▸ MEN1 O00255 4/20 0.46
▸ KMT2A Q03164 4/20 0.46
▸ ELANE P08246 1/20 0.42
▸ CYP1A2 P05177 1/20 0.42
▸ CYP2A6 P11509 1/20 0.42
▸ GAA P10253 4/20 0.38
▸ POLB P06746 2/20 0.38
▸ ALDH1A1 P00352 3/20 0.38
▸ SMN1; SMN2 Q16637 2/20 0.38
▸ BRD4 O60885 1/20 0.38
▸ HSD17B10 Q99714 3/20 0.37
▸ PGR P06401 1/20 0.37
▸ PTGS1 P23219 1/20 0.37
▸ MAPK1 P28482 1/20 0.37
▸ KDM4E B2RXH2 1/20 0.36
▸ JAK2 O60674 1/20 0.36
▸ USP2 O75604 1/20 0.36
▸ MAPT P10636 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4059205 0.92 ELANE (0.49) ESR1ESR2MEN1KMT2AELANE
SCHEMBL14087507 0.85 ESR1 (0.47) ESR1ESR2MEN1KMT2AELANE
SCHEMBL20382703 0.83 ELANE (0.47) ESR1ESR2MEN1KMT2AELANE
SCHEMBL14085554 0.83 ELANE (0.41) ESR1ESR2MEN1KMT2AELANE
SCHEMBL2738440 0.82 ALDH1A1 (0.57) MEN1KMT2AELANEGAAPOLB
SCHEMBL23057965 0.81 BRD4 (0.41) ESR1ESR2MEN1KMT2AELANE
SCHEMBL7880926 0.80 ALDH1A1 (0.48) MEN1KMT2AELANEGAAPOLB
SCHEMBL16785664 0.79 PTPN1 (0.46) ELANEPOLBALDH1A1SMN1; SMN2HSD17B10
SCHEMBL12748859 0.78 HTT (0.57) ESR1ESR2MEN1KMT2ACYP1A2
SCHEMBL2221010 0.78 ELANE (0.49) KMT2AELANEALDH1A1BRD4HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3745207-A1 PATTERN-FORMING METHOD USING ELECTRON BEAMS FOR EUV RAYS AND USE OF THIS METHOD FOR FORMING A FINE CIRCUIT OF A SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2020-12-02 — — EP disclosed
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