SCHEMBL2742171

SCHEMBL2742171

C=Cc1ccc(OS(=O)(=O)CCOc2c(F)c(F)c(S(=O)(=O)O)c(F)c2F)cc1

nearest known ligand 0.37

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
▸ TDP1 Q9NUW8 1/20 0.37
▸ CHRNB2 P17787 1/20 0.32
▸ CHRNB4 P30926 1/20 0.32
▸ CHRNA3 P32297 1/20 0.32
▸ CHRNA7 P36544 1/20 0.32
▸ CHRNA4 P43681 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14838098 0.85 TDP1 (0.41) TDP1CHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL9963679 0.85 TDP1 (0.30) TDP1
SCHEMBL15189382 0.81 TDP1 (0.46) TDP1
SCHEMBL16683010 0.78 TDP1 (0.44) TDP1
SCHEMBL9963771 0.78 ALDH1A1 (0.40) TDP1
SCHEMBL2742186 0.77 TDP1 (0.42) TDP1
SCHEMBL2742174 0.77 TDP1 (0.38) TDP1
SCHEMBL16590874 0.75 TDP1 (0.36) TDP1CHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL2881052 0.74 TDP1 (0.37) TDP1
SCHEMBL16590896 0.74 TDP1 (0.35) TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 — — US disclosed
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 — — US disclosed
US-9052590-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-06-09 — — US disclosed
US-9005870-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-04-14 — — US disclosed
US-8637220-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-01-28 — — US disclosed
US-20120156618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 — — US disclosed
US-20120082939-A1 ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-05 — — US disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 — — US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110318693-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 — — US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 — — US disclosed
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