SCHEMBL27426693

SCHEMBL27426693

O=Cc1cc(O)c(I)c(O)c1

nearest known ligand 0.64

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.52
PTGS2 P35354 1/20 0.52
RAB9A P51151 1/20 0.52
ACE P12821 1/20 0.50
PTGS1 P23219 1/20 0.50
XDH P47989 2/20 0.45
ALDH1A1 P00352 3/20 0.42
AOX1 Q06278 1/20 0.42
ERN1 O75460 2/20 0.41
ALDH5A1 P51649 3/20 0.40
ABAT P80404 3/20 0.40
TRIM24 O15164 1/20 0.38
HPGD P15428 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
TRIM33 Q9UPN9 1/20 0.38
FNTA P49354 1/20 0.37
FNTB P49356 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31554021 0.84 KDM4E (0.43) KDM4EPTGS2RAB9AACEPTGS1
SCHEMBL26856769 0.84 KDM4E (0.43) KDM4EPTGS2RAB9AACEPTGS1
SCHEMBL13487014 0.80 ALDH1A1 (0.58) KDM4EXDHALDH1A1AOX1ERN1
SCHEMBL16055193 0.80 KDM4E (0.39) KDM4EPTGS2RAB9AACEPTGS1
SCHEMBL7962088 0.78 XDH (0.50) KDM4EPTGS2RAB9AXDHALDH1A1
SCHEMBL27935044 0.78 XDH (0.59) KDM4EPTGS2RAB9AXDHALDH1A1
SCHEMBL132439 0.78 XDH (0.59) KDM4EPTGS2RAB9AXDHALDH1A1
SCHEMBL29086863 0.76 KDM4E (0.54) KDM4EPTGS2RAB9AXDHALDH1A1
Water SCHEMBL36578 0.76 XDH (0.57) KDM4EPTGS2RAB9AXDHALDH1A1
SCHEMBL31122716 0.76 XDH (0.57) KDM4EPTGS2RAB9AXDHALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120136704-A Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2025-06-13 CN disclosed
CN-120136703-A Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2025-06-13 CN disclosed
WO-2024135708-A1 METHOD FOR PRODUCING COMPOUND, POLYMER, COMPOSITION, AND PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2024-06-27 WO disclosed
WO-2024135708-A1 METHOD FOR PRODUCING COMPOUND, POLYMER, COMPOSITION, AND PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2024-06-27 WO disclosed