SCHEMBL27437149

SCHEMBL27437149

CC(=O)OC(CCC12CC3CC(CC(C3)C1)C2)C(C)=O

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 6/20 0.41
KMT2A Q03164 6/20 0.41
ALDH1A1 P00352 5/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
MAPT P10636 1/20 0.39
ATM Q13315 1/20 0.39
EPHX2 P34913 3/20 0.38
EPHX1 P07099 1/20 0.38
GRIN2D O15399 2/20 0.36
GRIN3B O60391 2/20 0.36
GRIN1 Q05586 2/20 0.36
GRIN2A Q12879 2/20 0.36
GRIN2B Q13224 2/20 0.36
GRIN2C Q14957 2/20 0.36
GRIN3A Q8TCU5 2/20 0.36
HSD17B10 Q99714 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
TSHR P16473 1/20 0.35
CA12 O43570 1/20 0.35
CA1 P00915 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27437026 0.78 MEN1 (0.45) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL19509239 0.76 KMT2A (0.44) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL22131563 0.72 EPHX2 (0.42) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL27436926 0.71 MEN1 (0.42) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL17471368 0.70 ALDH1A1 (0.40) MEN1KMT2AALDH1A1L3MBTL1EPHX2
SCHEMBL27437064 0.70 MEN1 (0.40) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL15648853 0.69 SMN1; SMN2 (0.50) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL16147061 0.69 SMN1; SMN2 (0.50) MEN1KMT2AALDH1A1L3MBTL1MAPT
SCHEMBL10051156 0.69 ALDH1A1 (0.44) MEN1KMT2AALDH1A1L3MBTL1EPHX2
SCHEMBL13780945 0.67 MEN1 (0.49) MEN1KMT2AALDH1A1L3MBTL1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed