Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL27533337

CSC1CCCCC1=O.O=S(=O)(O)C(F)(F)F

nearest known ligand 0.36

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Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA4 P22748 1/20 0.36
KMT2A Q03164 1/20 0.35
ALDH1A1 P00352 3/20 0.32
MAPT P10636 2/20 0.31
CYP3A4 P08684 1/20 0.31
GAA P10253 1/20 0.31
CYP2C19 P33261 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL29703345 0.95
SCHEMBL1713454 0.82
SCHEMBL6995240 0.80 KMT2A (0.52) CA1CA2CA4KMT2AALDH1A1
SCHEMBL6329621 0.80 CA1 (0.33) CA1CA2CA4KMT2AALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL7082064 0.78 KMT2A (0.31) KMT2AALDH1A1MAPT
SCHEMBL11612291 0.76
Trifluoromethanesulfonic Acid SCHEMBL29657722 0.75 ALDH1A1 (0.32) ALDH1A1MAPT
Trifluoromethanesulfonic Acid SCHEMBL2800832 0.75 CA1 (0.35) CA1CA2CA4KMT2AMAPT
Trifluoromethanesulfonic Acid SCHEMBL1078830 0.74 CA1 (0.36) CA1CA2CA4KMT2AMAPT
Trifluoromethanesulfonic Acid SCHEMBL29563922 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110637256-B Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method 三菱瓦斯化学株式会社 2024-01-09 CN disclosed
EP-3382453-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-09-20 EP disclosed
CN-1288499-C Radiation-sensitive resin composition JSR CORP (JP) 2006-12-06 CN disclosed
CN-1501166-A Radiation-sensitive resin composition JSR株式会社 2004-06-02 CN disclosed