Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL15345265 | 0.87 | KMT2A (0.32) | KMT2AALDH1A1MAPT | |
| SCHEMBL244367 | 0.85 | KMT2A (0.41) | KMT2AALDH1A1MAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL29657722 | 0.80 | ALDH1A1 (0.32) | ALDH1A1MAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL29703329 | 0.79 | MEN1 (0.32) | KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL27533337 | 0.78 | CA1 (0.36) | KMT2AALDH1A1MAPT | |
| SCHEMBL29520443 | 0.77 | ALDH1A1 (0.40) | KMT2AALDH1A1MAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL29703345 | 0.73 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL30140051 | 0.69 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL2800832 | 0.69 | CA1 (0.35) | KMT2AMAPT | |
| SCHEMBL28377989 | 0.69 | KMT2A (0.38) | KMT2AALDH1A1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2026-05-28 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| CN-120202438-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element | 信越化学工业株式会社 | 2025-06-24 | — | — | CN | disclosed |
| CN-120092212-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element | 信越化学工业株式会社 | 2025-06-03 | — | — | CN | disclosed |
| CN-120019329-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element | 信越化学工业株式会社 | 2025-05-16 | — | — | CN | disclosed |
| CN-119987132-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2025-05-13 | — | — | CN | disclosed |
| CN-119955091-A | Polymer, positive-type negative-type photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, surface protective film, and electronic component | 信越化学工业株式会社 | 2025-05-09 | — | — | CN | disclosed |
| EP-4508493-A1 | PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST | Suntific Materials (Weifang), Ltd. (CN) | 2025-02-19 | — | — | EP | disclosed |
| EP-4508495-A1 | MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE | Suntific Materials (Weifang), Ltd. (CN) | 2025-02-19 | — | — | EP | disclosed |
| CN-119439625-A | Negative photosensitive resin composition, pattern forming method, cured coating film forming method, interlayer insulating film, surface protective film, and electronic component | 信越化学工业株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-108388082-B | Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method | 信越化学工业株式会社（JP） | 2023-01-13 | — | — | CN | disclosed |
| CN-115023653-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern formation method | 信越化学工业株式会社 | 2022-09-06 | — | — | CN | disclosed |
| CN-114746809-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method, and light-emitting element | 信越化学工业株式会社 | 2022-07-12 | — | — | CN | disclosed |
| WO-2022131346-A1 | COMPOUND AND COMPOSITION | 株式会社ADEKA | 2022-06-23 | — | — | WO | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| CN-107544208-B | Negative photosensitive resin composition, spacer, protective film and liquid crystal display element | 奇美实业股份有限公司 | 2022-05-31 | — | — | CN | disclosed |
| CN-108700835-B | Resist pattern forming method and resist | 日本瑞翁株式会社 | 2022-05-27 | — | — | CN | disclosed |
| CN-109422881-B | Epoxy group-containing isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern formation method | 信越化学工业株式会社 | 2022-04-19 | — | — | CN | disclosed |
| CN-114253069-A | Photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, and surface protective film | 信越化学工业株式会社 | 2022-03-29 | — | — | CN | disclosed |
| US-20030104322-A1 | Developing solution for photoresist | TOKUYAMA CORPORATION (JP) | 2003-06-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | KMT2A 536/4885ALDH1A1 841/4885MAPT 4120/4885 |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | CBR3, CBR1, NOTUM | KMT2A 1858/4885ALDH1A1 827/4885MAPT 4526/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.