SCHEMBL27574792

SCHEMBL27574792

c1ccc([C](c2ccccc2)C23CC4CC(CC(C4)C2)C3)cc1

nearest known ligand 0.51

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.51
ALDH1A1 P00352 3/20 0.51
TSHR P16473 2/20 0.51
HTT P42858 2/20 0.51
FAAH O00519 1/20 0.50
P2RX7 Q99572 2/20 0.47
HPGD P15428 1/20 0.46
CNR2 P34972 1/20 0.44
EPHX1 P07099 1/20 0.44
LMNA P02545 1/20 0.44
MEN1 O00255 4/20 0.42
KMT2A Q03164 4/20 0.42
NPSR1 Q6W5P4 1/20 0.42
MAPK1 P28482 1/20 0.41
HSD11B1 P28845 1/20 0.41
EPHX2 P34913 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
MAPT P10636 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7050756 0.79 ALDH1A1 (0.57) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL17988344 0.76 ALDH1A1 (0.46) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL4599684 0.76 KDM4E (0.54) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL27523793 0.75 ALDH1A1 (0.45) KDM4EALDH1A1TSHRHTTFAAH
Benzamide SCHEMBL28953881 0.74 TSHR (0.55) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL13276034 0.72 FAAH (0.53) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL12040534 0.72 ALDH1A1 (0.50) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL3792990 0.71 ALDH1A1 (0.49) KDM4EALDH1A1TSHRHTTFAAH
SCHEMBL4483491 0.71 NR4A2 (0.50) KDM4EALDH1A1TSHRHTTFAAH
Biphenyl SCHEMBL28946850 0.71 MEN1 (0.55) KDM4EALDH1A1TSHRHTTFAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100415752-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2008-09-03 CN disclosed
CN-100367472-C Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2008-02-06 CN disclosed
CN-100335488-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2007-09-05 CN disclosed
CN-1803805-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-07-19 CN disclosed
CN-1793151-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-06-28 CN disclosed
CN-1437228-A Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2003-08-20 CN disclosed