SCHEMBL2757789

SCHEMBL2757789

CC(OCCOC(=O)C12CC3CC(CC(C3)C1)C2)OC1O[C@H](C2COC3(CCCCC3)O2)[C@@H]2OC3(CCCCC3)O[C@H]12

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 1/20 0.31
▸ PKM P14618 1/20 0.31
▸ CA2 P00918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2757770 0.87 ALDH1A1 (0.32) ALDH1A1PKMCA2
SCHEMBL2757742 0.86 CA2 (0.33) ALDH1A1CA2
SCHEMBL2757749 0.81 CA2 (0.34) CA2
SCHEMBL2757781 0.80 CA2 (0.30) CA2
SCHEMBL2757757 0.80 — —
SCHEMBL2757750 0.79 CA2 (0.32) CA2
SCHEMBL2757788 0.79 CA2 (0.32) CA2
SCHEMBL2757780 0.79 CA2 (0.33) CA2
SCHEMBL2757756 0.78 CA2 (0.35) CA2
SCHEMBL2757748 0.77 CA2 (0.35) CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
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