Water

Water

SCHEMBL27770753

[In+3].[Nb+5].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL284882 0.82
Water SCHEMBL20292 0.82
Water SCHEMBL15142096 0.67
Water SCHEMBL11336527 0.67
Lithium Ion SCHEMBL6872479 0.67
Water SCHEMBL3628115 0.67
Water SCHEMBL15901531 0.67
Water SCHEMBL15019930 0.67
Water SCHEMBL1662669 0.67
Water SCHEMBL20970284 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101580379-B Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof UNIV BEIHANG 2012-05-16 CN claimed
CN-101580379-A Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof UNIV BEIJING BUAA (CN) 2009-11-18 CN claimed
CN-101580379-B Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof UNIV BEIHANG 2012-05-16 CN disclosed
CN-101580379-A Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof UNIV BEIJING BUAA (CN) 2009-11-18 CN disclosed