Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPC1 | O15118 | 9/20 | 0.82 |
| ▸ | RAB9A | P51151 | 9/20 | 0.82 |
| ▸ | GAA | P10253 | 2/20 | 0.82 |
| ▸ | KDM4E | B2RXH2 | 12/20 | 0.80 |
| ▸ | ALDH1A1 | P00352 | 11/20 | 0.80 |
| ▸ | PKN1 | Q16512 | 1/20 | 0.80 |
| ▸ | PKN2 | Q16513 | 1/20 | 0.80 |
| ▸ | LDHA | P00338 | 1/20 | 0.73 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.73 |
| ▸ | SMN1; SMN2 | Q16637 | 9/20 | 0.62 |
| ▸ | HSD17B10 | Q99714 | 6/20 | 0.62 |
| ▸ | TP53 | P04637 | 5/20 | 0.62 |
| ▸ | PKM | P14618 | 3/20 | 0.62 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.62 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.62 |
| ▸ | HPGD | P15428 | 9/20 | 0.62 |
| ▸ | MAPT | P10636 | 5/20 | 0.62 |
| ▸ | GFER | P55789 | 2/20 | 0.62 |
| ▸ | POLB | P06746 | 1/20 | 0.62 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.58 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL2148025 | 0.91 | NPC1 (0.92) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| Hydrochloric Acid SCHEMBL2147086 | 0.91 | NPC1 (0.92) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| SCHEMBL105095 | 0.91 | NPC1 (1.00) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| Benzene SCHEMBL28005151 | 0.91 | NPC1 (1.00) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| SCHEMBL29693614 | 0.89 | KDM4E (1.00) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| SCHEMBL695990 | 0.89 | KDM4E (1.00) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| SCHEMBL4775610 | 0.89 | NPC1 (0.96) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| SCHEMBL467859 | 0.89 | NPC1 (0.96) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| Potassium SCHEMBL4891434 | 0.89 | NPC1 (0.96) | NPC1RAB9AGAAKDM4EALDH1A1 | |
| SCHEMBL2147022 | 0.89 | NPC1 (0.96) | NPC1RAB9AGAAKDM4EALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-105264440-B | Anti-corrosion agent composition | 三菱瓦斯化学株式会社 | 2019-09-24 | — | — | CN | disclosed |
| CN-106133604-B | Protectant composition and protectant pattern forming method | 三菱瓦斯化学株式会社 | 2019-09-06 | — | — | CN | disclosed |
| CN-109690361-A | Optical component forms composition | 三菱瓦斯化学株式会社 | 2019-04-26 | — | — | CN | disclosed |
| CN-104737073-B | Anti-corrosion agent composition | 三菱瓦斯化学株式会社 | 2019-03-08 | — | — | CN | disclosed |
| CN-109073782-A | Optical element forms composition and its solidfied material | 三菱瓦斯化学株式会社 | 2018-12-21 | — | — | CN | disclosed |
| CN-103733135-B | Resist composition, method for forming resist pattern, polyphenol compound used for the same, and alcohol compound derived from the polyphenol compound | 三菱瓦斯化学株式会社 | 2018-11-27 | — | — | CN | disclosed |
| CN-108137478-A | Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method | 三菱瓦斯化学株式会社 | 2018-06-08 | — | — | CN | disclosed |
| CN-107924123-A | Photoetching material and its manufacture method, photoetching composition, pattern formation method and, compound, resin and their purification process | 学校法人关西大学 | 2018-04-17 | — | — | CN | disclosed |
| CN-107533290-A | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | 三菱瓦斯化学株式会社 | 2018-01-02 | — | — | CN | disclosed |
| CN-107533291-A | Compound, resist composition, and resist pattern formation method using same | 三菱瓦斯化学株式会社 | 2018-01-02 | — | — | CN | disclosed |
| CN-107430337-A | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107428717-A | Resist composition, resist pattern forming method, and polyphenol compound used for same | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107430338-A | RADIATION-SENSITIVE COMPOSITION | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107407874-A | Radiation-sensitive composition, amorphous film and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2017-11-28 | — | — | CN | disclosed |
| CN-106957217-A | Polyphenol compound for anti-corrosion agent composition | 三菱瓦斯化学株式会社 | 2017-07-18 | — | — | CN | disclosed |
| CN-106462059-A | Resist material, resist composition, and resist pattern formation method | 三菱瓦斯化学株式会社 | 2017-02-22 | — | — | CN | disclosed |
| CN-106133604-A | Protectant composition and protectant pattern forming method | 三菱瓦斯化学株式会社 | 2016-11-16 | — | — | CN | disclosed |
| CN-103717562-B | Cyclic compound, its manufacture method, compositions and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2016-08-24 | — | — | CN | disclosed |