Benzaldehyde

Benzaldehyde

SCHEMBL28089201

CCCCI.O=Cc1ccccc1

nearest known ligand 0.56

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.56
CYP2A6 P11509 2/20 0.56
LMNA P02545 2/20 0.46
TDP1 Q9NUW8 1/20 0.45
ALDH3A1 P30838 1/20 0.39
ALDH1A3 P47895 1/20 0.39
EGFR P00533 1/20 0.38
HDAC3 O15379 1/20 0.38
NPC1 O15118 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
SMN1; SMN2 Q16637 2/20 0.36
MAPT P10636 1/20 0.36
HPGD P15428 1/20 0.36
TSHR P16473 1/20 0.35
SIGMAR1 Q99720 1/20 0.35
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
KMT2A Q03164 1/20 0.35
MAOA P21397 1/20 0.35
MAOB P27338 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Benzaldehyde SCHEMBL28218440 0.90 ALDH1A1 (0.64) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL28129001 0.87 ALDH1A1 (0.67) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL27939687 0.86 ALDH1A1 (0.58) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL28089327 0.85 ALDH1A1 (0.70) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Pentadecane SCHEMBL27722034 0.83 ALDH1A1 (0.61) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL27780817 0.83 ALDH1A1 (0.74) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL3088932 0.83 ALDH1A1 (0.74) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL28288211 0.82 ALDH1A1 (0.54) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL27759517 0.82 ALDH1A1 (0.54) ALDH1A1CYP2A6LMNATDP1ALDH3A1
Benzaldehyde SCHEMBL27281339 0.82 ALDH1A1 (0.54) ALDH1A1CYP2A6LMNATDP1ALDH3A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108137478-A Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method 三菱瓦斯化学株式会社 2018-06-08 CN disclosed
CN-107533290-A RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN 三菱瓦斯化学株式会社 2018-01-02 CN disclosed
CN-107430337-A RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107428646-A Compound, resin and their purification process, lower floor's film formation material of photoetching, lower membrane formation with composition and lower membrane and, corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107428717-A Resist composition, resist pattern forming method, and polyphenol compound used for same 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107407874-A Radiation-sensitive composition, amorphous film and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2017-11-28 CN disclosed
CN-103717562-B Cyclic compound, its manufacture method, compositions and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2016-08-24 CN disclosed