Benzaldehyde

Benzaldehyde

SCHEMBL28089327

CCI.O=Cc1ccccc1

nearest known ligand 0.70

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 8/20 0.70
CYP2A6 P11509 4/20 0.70
ALDH3A1 P30838 1/20 0.46
ALDH1A3 P47895 1/20 0.46
NPC1 O15118 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42
TSHR P16473 1/20 0.41
LMNA P02545 3/20 0.41
TRPA1 O75762 1/20 0.41
ALOX5 P09917 1/20 0.41
MAPK1 P28482 1/20 0.41
KMT2A Q03164 2/20 0.40
MAOA P21397 1/20 0.40
MAOB P27338 1/20 0.40
NPSR1 Q6W5P4 1/20 0.39
MEN1 O00255 1/20 0.39
TYR P14679 1/20 0.39
CYP2A13 Q16696 1/20 0.39
PPARG P37231 1/20 0.39
TDP1 Q9NUW8 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Benzaldehyde SCHEMBL27780817 0.92 ALDH1A1 (0.74) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL28218440 0.91 ALDH1A1 (0.64) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL27520789 0.90 ALDH1A1 (0.78) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL3088932 0.87 ALDH1A1 (0.74) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL28089325 0.87 ALDH1A1 (0.82) ALDH1A1CYP2A6TSHRLMNATRPA1
Benzaldehyde SCHEMBL7038566 0.85 ALDH1A1 (0.70) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL1129906 0.85 ALDH1A1 (0.70) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL9780149 0.85 ALDH1A1 (0.70) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL28807025 0.85 ALDH1A1 (0.70) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1
Benzaldehyde SCHEMBL28089201 0.85 ALDH1A1 (0.56) ALDH1A1CYP2A6ALDH3A1ALDH1A3NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108137478-A Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method 三菱瓦斯化学株式会社 2018-06-08 CN disclosed
CN-107533290-A RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN 三菱瓦斯化学株式会社 2018-01-02 CN disclosed
CN-107430337-A RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107428717-A Resist composition, resist pattern forming method, and polyphenol compound used for same 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107428646-A Compound, resin and their purification process, lower floor's film formation material of photoetching, lower membrane formation with composition and lower membrane and, corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-107407874-A Radiation-sensitive composition, amorphous film and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2017-11-28 CN disclosed
CN-103717562-B Cyclic compound, its manufacture method, compositions and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2016-08-24 CN disclosed