SCHEMBL2819865

SCHEMBL2819865

CCC(C)(O)CC(CC(C)O)C(C)(O)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1005408 0.75
SCHEMBL2819665 0.73 TSHR (0.38)
SCHEMBL11890303 0.68
SCHEMBL11890325 0.68
SCHEMBL543718 0.68
SCHEMBL28645882 0.67 TSHR (0.31)
SCHEMBL1784360 0.67 TSHR (0.36)
SCHEMBL2819669 0.66 MAPK1 (0.31)
1,6-Hexanediol SCHEMBL1152427 0.65 LMNA (0.37)
SCHEMBL825422 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101313246-B Radiation-sensitive resin composition JSR CORP 2012-10-03 CN disclosed
US-8206888-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2012-06-26 US disclosed
EP-1182506-B1 Crosslinked positive-working photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2010-10-27 EP disclosed
US-20100028800-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-04 US disclosed
CN-101313246-A Radiation-sensitive resin composition JSR CORP (JP) 2008-11-26 CN disclosed
EP-1953593-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed
US-7364831-B2 Positive resist composition and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-29 US disclosed
US-20070004816-A1 Photocurable resin composition DSM IP ASSETS B.V. (NL) 2007-01-04 US disclosed
EP-1634124-A1 PHOTOCURABLE RESIN COMPOSITION DSM IP Assets B.V. (NL) 2006-03-15 EP disclosed
US-20060014100-A1 Positive resist composition and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-19 US disclosed
US-6777158-B2 OCCURRENCE OF DEFECTS IN THE PATTERNED RESIST LAYER CAN BE GREATLY SUPPRESSED RESULTING IN INCREASED RELIABILITY OF THE SEMICONDUCTOR DEVICES AND PRODUCTIVITY THEREOF. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-08-17 US disclosed
US-20040067615-A1 Method for the preparation of a semiconductor device MAEMORI SATOSHI (JP) 2004-04-08 US disclosed
US-6630282-B2 For giving a patterned resist layer with high pattern resolution and excellent resistance against etching, used for photolithographic patterning works in the manufacture of electronic devices TOKYO OHKA KOGYO CO., LTD. (JP) 2003-10-07 US disclosed
US-20020045133-A1 Method for the preparation of a semiconductor device TOKYO OHKA KOGYO CO., LTD. (JP) 2002-04-18 US disclosed
US-20020034704-A1 Crosslinked positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2002-03-21 US disclosed
EP-1182506-A1 Crosslinked positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2002-02-27 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
US-6120972-A COPOLYMER OF ACRYLIC ESTER AND CARBONATE WITH PHOTOACID GENERATOR FOR PHOTOSENSITIVE ELEMENTS JSR CORPORATION (JP) 2000-09-19 US disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0901043-A1 Radiation-sensitive resin composition JSR Corporation (JP) 1999-03-10 EP disclosed