Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3204440 | 0.78 | TSHR (0.31) | TSHR | |
| SCHEMBL1490142 | 0.77 | — | — | |
| SCHEMBL825422 | 0.75 | — | — | |
| SCHEMBL2826341 | 0.75 | MAPK1 (0.38) | TSHRMAPK1TDP1ALDH1A1 | |
| SCHEMBL2819865 | 0.73 | — | — | |
| SCHEMBL28379232 | 0.72 | MAPK1 (0.36) | TSHRMAPK1TDP1ALDH1A1 | |
| SCHEMBL3182014 | 0.72 | MAPK1 (0.36) | TSHRMAPK1TDP1ALDH1A1 | |
| SCHEMBL13354747 | 0.71 | — | — | |
| SCHEMBL13312865 | 0.71 | — | — | |
| SCHEMBL22300 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8206888-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2012-06-26 | — | — | US | disclosed |
| EP-1182506-B1 | Crosslinked positive-working photoresist composition | TOKYO OHKA KOGYO CO LTD (JP) | 2010-10-27 | — | — | EP | disclosed |
| US-20100028800-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| CN-101313246-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2008-11-26 | — | — | CN | disclosed |
| EP-1953593-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | disclosed |
| US-7364831-B2 | Positive resist composition and resist pattern formation method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-29 | — | — | US | disclosed |
| US-20070004816-A1 | Photocurable resin composition | DSM IP ASSETS B.V. (NL) | 2007-01-04 | — | — | US | disclosed |
| CN-1806208-A | Photocurable resin composition | DSM IP ASSETS BV (NL) | 2006-07-19 | — | — | CN | disclosed |
| EP-1634124-A1 | PHOTOCURABLE RESIN COMPOSITION | DSM IP Assets B.V. (NL) | 2006-03-15 | — | — | EP | disclosed |
| US-20060014100-A1 | Positive resist composition and resist pattern formation method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-01-19 | — | — | US | disclosed |
| US-6777158-B2 | OCCURRENCE OF DEFECTS IN THE PATTERNED RESIST LAYER CAN BE GREATLY SUPPRESSED RESULTING IN INCREASED RELIABILITY OF THE SEMICONDUCTOR DEVICES AND PRODUCTIVITY THEREOF. | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-08-17 | — | — | US | disclosed |
| US-20040067615-A1 | Method for the preparation of a semiconductor device | MAEMORI SATOSHI (JP) | 2004-04-08 | — | — | US | disclosed |
| US-6630282-B2 | For giving a patterned resist layer with high pattern resolution and excellent resistance against etching, used for photolithographic patterning works in the manufacture of electronic devices | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-10-07 | — | — | US | disclosed |
| US-20020045133-A1 | Method for the preparation of a semiconductor device | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-04-18 | — | — | US | disclosed |
| US-20020034704-A1 | Crosslinked positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-03-21 | — | — | US | disclosed |
| EP-1182506-A1 | Crosslinked positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-02-27 | — | — | EP | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| US-6120972-A | COPOLYMER OF ACRYLIC ESTER AND CARBONATE WITH PHOTOACID GENERATOR FOR PHOTOSENSITIVE ELEMENTS | JSR CORPORATION (JP) | 2000-09-19 | — | — | US | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0901043-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 1999-03-10 | — | — | EP | disclosed |