⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8832416 | 0.96 | MGLL (0.30) | — | |
| SCHEMBL378577 | 0.77 | — | — | |
| SCHEMBL8647505 | 0.77 | — | — | |
| SCHEMBL918211 | 0.74 | MGLL (0.30) | — | |
| SCHEMBL8380773 | 0.74 | MGLL (0.30) | — | |
| SCHEMBL11793916 | 0.72 | — | — | |
| SCHEMBL19038502 | 0.72 | — | — | |
| SCHEMBL467628 | 0.69 | — | — | |
| SCHEMBL19038499 | 0.69 | — | — | |
| SCHEMBL8077052 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110573651-B | Formulations for depositing silicon doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2022-07-22 | — | — | CN | claimed |
| CN-110573651-A | Novel formulations for the deposition of silicon-doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2019-12-13 | — | — | CN | claimed |
| CN-110573651-B | Formulations for depositing silicon doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2022-07-22 | — | — | CN | disclosed |
| CN-110573651-A | Novel formulations for the deposition of silicon-doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2019-12-13 | — | — | CN | disclosed |