Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 1/20 | 0.50 |
| ▸ | SIGMAR1 | Q99720 | 3/20 | 0.35 |
| ▸ | NAAA | Q02083 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.32 |
| ▸ | NOS1 | P29475 | 2/20 | 0.31 |
| ▸ | NOS2 | P35228 | 2/20 | 0.31 |
| ▸ | TLR7 | Q9NYK1 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23521408 | 0.85 | CYP1A2 (0.48) | CYP1A2SIGMAR1SMN1; SMN2EPHX1 | |
| SCHEMBL17766148 | 0.83 | CYP1A2 (0.52) | CYP1A2SIGMAR1SMN1; SMN2EPHX1TLR7 | |
| SCHEMBL27754297 | 0.80 | — | — | |
| SCHEMBL17766130 | 0.78 | CYP1A2 (0.50) | CYP1A2SIGMAR1SMN1; SMN2EPHX1 | |
| SCHEMBL17766136 | 0.76 | CYP1A2 (0.48) | CYP1A2SIGMAR1NAAAEPHX1 | |
| SCHEMBL17766147 | 0.76 | CYP1A2 (0.48) | CYP1A2SIGMAR1NAAAEPHX1 | |
| SCHEMBL32671419 | 0.76 | CYP1A2 (0.37) | CYP1A2 | |
| SCHEMBL28415916 | 0.76 | CYP1A2 (0.46) | CYP1A2SIGMAR1 | |
| SCHEMBL187930 | 0.76 | PPM1B (0.31) | — | |
| SCHEMBL431790 | 0.75 | LMNA (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111855581-B | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2023-04-14 | — | — | CN | disclosed |
| CN-114660896-A | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2022-06-24 | — | — | CN | disclosed |
| CN-114594657-A | Composition for forming silicon-containing resist underlayer film and pattern formation method | 信越化学工业株式会社 | 2022-06-07 | — | — | CN | disclosed |
| CN-112526822-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2021-03-19 | — | — | CN | disclosed |
| CN-112286000-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2021-01-29 | — | — | CN | disclosed |
| CN-111855581-A | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| CN-111856882-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| CN-111458980-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-07-28 | — | — | CN | disclosed |
| CN-111423587-A | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2020-07-17 | — | — | CN | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |