SCHEMBL28418330

SCHEMBL28418330

CO[SiH](CC(C1CCCCC1)C1CCCCC1)OC

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.43
SHBG P04278 1/20 0.38
CYP2D6 P10635 2/20 0.34
TP53 P04637 2/20 0.34
LMNA P02545 2/20 0.34
MEN1 O00255 1/20 0.34
ALDH1A1 P00352 1/20 0.34
CYP1A2 P05177 1/20 0.34
TSHR P16473 1/20 0.34
KMT2A Q03164 1/20 0.34
MLNR O43193 1/20 0.34
ABCB11 O95342 1/20 0.34
EGFR P00533 1/20 0.34
FYN P06241 1/20 0.34
CHRM2 P08172 1/20 0.34
CHRM4 P08173 1/20 0.34
HTR1A P08908 1/20 0.34
CHRM5 P08912 1/20 0.34
ADRA2A P08913 1/20 0.34
ADORA3 P0DMS8 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28891530 0.81 EPHX1 (0.41) EPHX1SHBGCYP2D6TP53LMNA
SCHEMBL28420942 0.79 EPHX1 (0.40) EPHX1SHBGCYP2D6TP53LMNA
SCHEMBL28419183 0.76 EPHX1 (0.38) EPHX1SHBGCYP2D6TP53LMNA
SCHEMBL5464600 0.75 EPHX1 (0.48) EPHX1SHBGCYP2D6TP53LMNA
SCHEMBL773611 0.70 KDM4E (0.42) EPHX1SHBGMEN1ALDH1A1KMT2A
SCHEMBL31244869 0.69 SHBG (0.39) EPHX1SHBG
SCHEMBL29086825 0.68 EPHX1 (0.33) EPHX1SHBGTP53LMNASIGMAR1
SCHEMBL29042635 0.68 EPHX1 (0.38) EPHX1SHBGCYP2D6TP53LMNA
SCHEMBL6909519 0.67 CYP1A2 (0.35) CYP1A2SIGMAR1
SCHEMBL6909139 0.67 CYP1A2 (0.35) CYP1A2SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120020643-A Pattern forming method 信越化学工业株式会社 2025-05-20 CN disclosed
CN-114594657-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-22 CN disclosed
CN-111208710-B Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method 信越化学工业株式会社 2023-08-22 CN disclosed
CN-114594657-A Composition for forming silicon-containing resist underlayer film and pattern formation method 信越化学工业株式会社 2022-06-07 CN disclosed
CN-111855581-A Method for determining diffusion distance of hardening catalyst 信越化学工业株式会社 2020-10-30 CN disclosed
CN-111856882-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2020-10-30 CN disclosed
CN-111208710-A Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method 信越化学工业株式会社 2020-05-29 CN disclosed