SCHEMBL28419183

SCHEMBL28419183

CCCO[SiH](CC(C1CCCCC1)C1CCCCC1)OCCC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.38
SHBG P04278 1/20 0.38
CYP2D6 P10635 2/20 0.34
MEN1 O00255 1/20 0.34
ALDH1A1 P00352 1/20 0.34
LMNA P02545 1/20 0.34
TP53 P04637 1/20 0.34
CYP1A2 P05177 1/20 0.34
TSHR P16473 1/20 0.34
KMT2A Q03164 1/20 0.34
MLNR O43193 1/20 0.34
ABCB11 O95342 1/20 0.34
EGFR P00533 1/20 0.34
FYN P06241 1/20 0.34
CHRM2 P08172 1/20 0.34
CHRM4 P08173 1/20 0.34
HTR1A P08908 1/20 0.34
CHRM5 P08912 1/20 0.34
ADRA2A P08913 1/20 0.34
ADORA3 P0DMS8 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28420942 0.85 EPHX1 (0.40) EPHX1SHBGCYP2D6MEN1ALDH1A1
SCHEMBL28418330 0.76 EPHX1 (0.43) EPHX1SHBGCYP2D6MEN1ALDH1A1
SCHEMBL28891530 0.75 EPHX1 (0.41) EPHX1SHBGCYP2D6MEN1ALDH1A1
SCHEMBL8953520 0.71 CYP1A2 (0.40) CYP1A2
SCHEMBL7754714 0.70 SHBG (0.38) EPHX1SHBGLMNATP53
SCHEMBL6059263 0.70 CYP1A2 (0.42) EPHX1CYP2D6MEN1ALDH1A1CYP1A2
SCHEMBL2700537 0.70 SHBG (0.44) EPHX1SHBGCYP2D6MEN1ALDH1A1
SCHEMBL3275670 0.70 ALDH1A1 (0.36) SHBGCYP2D6ALDH1A1CYP1A2
SCHEMBL5464600 0.69 EPHX1 (0.48) EPHX1SHBGCYP2D6MEN1ALDH1A1
SCHEMBL28422812 0.68 EPHX1 (0.30) EPHX1SHBG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114594657-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-22 CN disclosed
CN-118620392-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-09-10 CN disclosed
CN-114594657-A Composition for forming silicon-containing resist underlayer film and pattern formation method 信越化学工业株式会社 2022-06-07 CN disclosed
CN-111855581-A Method for determining diffusion distance of hardening catalyst 信越化学工业株式会社 2020-10-30 CN disclosed
CN-111856882-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2020-10-30 CN disclosed
CN-111208710-A Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method 信越化学工业株式会社 2020-05-29 CN disclosed