SCHEMBL2863484

SCHEMBL2863484

CCO[Si]1(c2ccccc2)C[Si](OCC)(c2ccccc2)C[Si](OCC)(c2ccccc2)C[Si](OCC)(c2ccccc2)C1

nearest known ligand 0.33

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.33
TP53 P04637 1/20 0.32
GAA P10253 1/20 0.32
TSHR P16473 2/20 0.31
MEN1 O00255 1/20 0.31
NPC1 O15118 1/20 0.31
KMT2A Q03164 1/20 0.31
LMNA P02545 1/20 0.31
ALOX12 P18054 1/20 0.31
ACHE P22303 1/20 0.31
RELA Q04206 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2869706 0.75 CA4 (0.36) LTA4HTSHRLMNAALOX12ACHE
SCHEMBL14564280 0.67 TP53 (0.33) LTA4HTP53TSHRMEN1NPC1
SCHEMBL14573756 0.65 TP53 (0.32) TP53TSHR
SCHEMBL1484049 0.61 TSHR (0.33) GAATSHRLMNAALOX12ACHE
SCHEMBL15636325 0.61 TP53 (0.36) TP53LMNA
SCHEMBL7715185 0.59 MAPT (0.35) TSHRMEN1NPC1KMT2ALMNA
Toluene SCHEMBL11442347 0.59 TSHR (0.61) LTA4HTP53GAATSHRMEN1
Toluene SCHEMBL4611849 0.59 TSHR (0.61) LTA4HTP53GAATSHRMEN1
Toluene SCHEMBL6666240 0.59 TSHR (0.61) LTA4HTP53GAATSHRMEN1
Toluene SCHEMBL98542 0.59 TSHR (0.61) LTA4HTP53GAATSHRMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2154708-B1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2017-07-26 EP disclosed
US-8277600-B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-02 US disclosed
US-20100040895-A1 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-18 US disclosed
EP-2154708-A1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-02-17 EP disclosed