SCHEMBL2869706

SCHEMBL2869706

CO[Si]1(c2ccccc2)C[Si](OC)(c2ccccc2)C[Si](OC)(c2ccccc2)C[Si](OC)(c2ccccc2)C1

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.36
TSHR P16473 2/20 0.35
LMNA P02545 1/20 0.35
ALOX12 P18054 1/20 0.35
ACHE P22303 1/20 0.35
CA12 O43570 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
CA7 P43166 1/20 0.32
CA9 Q16790 1/20 0.32
CA14 Q9ULX7 1/20 0.32
LTA4H P09960 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2863484 0.75 LTA4H (0.33) TSHRLMNAALOX12ACHELTA4H
SCHEMBL8895783 0.73 CA4 (0.43) CA4TSHRLMNAALOX12ACHE
SCHEMBL1484049 0.65 TSHR (0.33) TSHRLMNAALOX12ACHE
SCHEMBL15144009 0.65 CA4 (0.36) CA4TSHRCA12CA1CA2
SCHEMBL7715185 0.64 MAPT (0.35) CA4TSHRLMNAALOX12ACHE
SCHEMBL38659934 0.62 LMNA (0.30) TSHRLMNAALOX12ACHE
SCHEMBL9404264 0.62 LMNA (0.30) TSHRLMNAALOX12ACHE
SCHEMBL25062582 0.61
Toluene SCHEMBL9799867 0.60 ACHE (0.79) CA4TSHRLMNAALOX12ACHE
Toluene SCHEMBL28020597 0.60 ACHE (0.79) CA4TSHRLMNAALOX12ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2154708-B1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2017-07-26 EP disclosed
US-8277600-B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-02 US disclosed
US-20100040895-A1 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-18 US disclosed
EP-2154708-A1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-02-17 EP disclosed