SCHEMBL2880826

SCHEMBL2880826

CCCCCCCCCCCCc1ccc(S(=O)(=O)O/N=C(\C#N)c2ccc(OC)cc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
PLK1 P53350 1/20 0.41
PLK3 Q9H4B4 1/20 0.41
THRA P10827 2/20 0.40
THRB P10828 2/20 0.40
CA2 P00918 1/20 0.40
CNR2 P34972 1/20 0.39
PTGS2 P35354 1/20 0.39
ALOX15B O15296 1/20 0.38
PLA2G1B P04054 4/20 0.38
ATG4B Q9Y4P1 4/20 0.38
CYP1A2 P05177 1/20 0.38
TDP1 Q9NUW8 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2880829 1.00 PLK1 (0.41) PLK1PLK3THRATHRBCA2
SCHEMBL36667 0.88 CA2 (0.42) THRATHRBCA2PLA2G1BATG4B
SCHEMBL36666 0.88 CA2 (0.42) THRATHRBCA2PLA2G1BATG4B
SCHEMBL7789356 0.87 SMPD1 (0.46) PLK1CNR2
SCHEMBL7789358 0.87 SMPD1 (0.46) PLK1CNR2
SCHEMBL7781699 0.87 CA2 (0.39) THRATHRBCA2PLA2G1BATG4B
SCHEMBL7781697 0.87 CA2 (0.39) THRATHRBCA2PLA2G1BATG4B
SCHEMBL5918261 0.85 EP300 (0.45) CA2CYP1A2TDP1
SCHEMBL5918260 0.85 EP300 (0.45) CA2CYP1A2TDP1
SCHEMBL547022 0.82 FAAH (0.43) PLK1PLK3THRATHRBCA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1324134-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-10-20 EP disclosed
US-6866982-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-15 US disclosed
US-6835530-B2 Base material for lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-28 US disclosed
US-20040121260-A1 Base material for lithography TOKYO OHKA KOGYO CO., LTD. 2004-06-24 US disclosed
US-6635400-B2 Alkali-insoluble polymer having acidic groups protected with acid labile groups, photoacid generator, and 1,2-naphthoquinonediazidosulfonyl group-bearing compound; high resolution; plating resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-21 US disclosed
US-20030175617-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-18 US disclosed
EP-1324134-A2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-02 EP disclosed
EP-0780729-B1 Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2002-07-10 EP disclosed
US-20010044066-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-22 US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6063953-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2000-05-16 US disclosed
US-5902713-A Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-05-11 US disclosed
EP-0780729-A1 Chemical-sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-06-25 EP disclosed