SCHEMBL2900929

SCHEMBL2900929

O=C1c2ccccc2C(=O)N1OS(=O)(=O)c1cccc2ccccc12

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 10/20 0.57
ALDH1A1 P00352 9/20 0.57
MAPT P10636 9/20 0.57
KMT2A Q03164 9/20 0.57
HPGD P15428 7/20 0.57
MEN1 O00255 6/20 0.56
F2 P00734 4/20 0.56
HTT P42858 3/20 0.56
LMNA P02545 2/20 0.56
SMN1; SMN2 Q16637 1/20 0.56
XBP1 P17861 2/20 0.54
VDR P11473 3/20 0.53
THRB P10828 1/20 0.49
CYP1A2 P05177 1/20 0.49
CYP3A4 P08684 1/20 0.49
CYP2C19 P33261 1/20 0.49
NPSR1 Q6W5P4 1/20 0.49
POLB P06746 2/20 0.47
L3MBTL1 Q9Y468 1/20 0.47
CA1 P00915 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL548395 0.93 KDM4E (0.68) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL548394 0.87 ALDH1A1 (0.47) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL3824184 0.87 KMT2A (0.48) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL2895865 0.84 KDM4E (0.46) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL5367849 0.83 CA1 (0.47) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL3825730 0.82 KDM4E (0.43) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL65216 0.81 PARL (0.58) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL4834111 0.81 CA1 (0.46) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL4837508 0.78 MEN1 (0.46) KDM4EALDH1A1MAPTKMT2AHPGD
SCHEMBL7784307 0.78 KDM4E (0.73) KDM4EALDH1A1MAPTKMT2AHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022138648-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-06-30 WO disclosed
CN-112987497-A Resist composition and resist pattern forming method 东京应化工业株式会社 2021-06-18 CN disclosed
EP-1199603-B1 Positive photosensitive composition FUJIFILM CORP (JP) 2016-11-30 EP disclosed
EP-1319981-B1 Positive resist composition FUJIFILM CORP (JP) 2012-10-24 EP disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
EP-1179750-B1 Positive photosensitive composition and method for producing a precision integrated circuit element using the same FUJIFILM CORP (JP) 2012-07-25 EP disclosed
US-8173349-B2 Photosensitive resin composition, polymer compound, method of forming a pattern, and electronic device FUJIFILM CORPORATION (JP) 2012-05-08 US disclosed
US-7977029-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2011-07-12 US disclosed
US-7812194-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-10-12 US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6042988-A ALKALI-SOLUBLE RESIN, A COMPOUND CAPABLE OF GENERATING AN ACID BY IRRADIATION AND A CROSSLINKING AGENT, AND FURTHER CONTAINS AN ORGANIC CARBOXYLIC ACID AS ACIDIC COMPOUND AND ORGANIC AMINE AS ALKALINE COMPOUND; DEFINITION AND PRECISION TOKYO OHKA KOGYO CO., LTD. (JP) 2000-03-28 US disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 EP disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
EP-0085024-B1 METHOD FOR PRODUCING IMAGES IN PHOTORESIST LAYERS CIBA-GEIGY AG (CH) 1987-07-15 EP disclosed
EP-0058638-B1 CURABLE COMPOSITIONS CONTAINING AN ACID-CURABLE RESIN, AND PROCESS FOR CURING THEM CIBA-GEIGY AG (CH) 1985-08-28 EP disclosed
US-4439517-A Process for the formation of images with epoxide resin CIBA-GEIGY CORPORATION (US) 1984-03-27 US disclosed
EP-0058638-A2 Curable compositions containing an acid-curable resin, and process for curing them CIBA-GEIGY AG (CH) 1982-08-25 EP disclosed