SCHEMBL29098342

SCHEMBL29098342

CCCC(C(C)=O)c1ccccc1C

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 1/20 0.40
SLC6A4 P31645 1/20 0.40
SLC6A3 Q01959 1/20 0.40
ESR1 P03372 1/20 0.38
ACP3 P15309 1/20 0.38
ALDH1A1 P00352 3/20 0.36
POLB P06746 2/20 0.36
MAPK1 P28482 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
PGR P06401 1/20 0.36
SCN1A P35498 1/20 0.36
SCN2A Q99250 1/20 0.36
SCN3A Q9NY46 1/20 0.36
HPGD P15428 2/20 0.35
LMNA P02545 2/20 0.35
MAPT P10636 2/20 0.35
GAA P10253 1/20 0.35
ROCK2 O75116 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6577823 0.86 ESR1 (0.38) ESR1ACP3ALDH1A1TDP1HPGD
SCHEMBL6262528 0.86 ACP3 (0.41) SLC6A2SLC6A4SLC6A3ESR1ACP3
SCHEMBL5607127 0.84 ALDH1A1 (0.42) SLC6A2SLC6A4SLC6A3ESR1ACP3
SCHEMBL9657053 0.81 ALDH1A1 (0.38) SLC6A2SLC6A3ALDH1A1POLBCYP1A2
SCHEMBL9864216 0.79 CTSA (0.45) ACP3CYP1A2
SCHEMBL431387 0.77 TAS1R3 (0.36) SLC6A2SLC6A3ALDH1A1POLBCYP1A2
SCHEMBL8879024 0.77 ALDH1A1 (0.41) SLC6A2SLC6A4SLC6A3ALDH1A1MAPK1
SCHEMBL10976123 0.76 CNR2 (0.42) ACP3ALDH1A1POLBMAPK1MAPT
SCHEMBL13385031 0.76 CYP2C19 (0.49) ESR1ALDH1A1POLBLMNACYP1A2
SCHEMBL185644 0.75 CTSA (0.42) ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116710500-A Polymer, composition, method for producing polymer, composition for forming film, resist composition, method for forming resist pattern, radiation-sensitive composition, composition for forming underlayer film for lithography, method for producing underlayer film for lithography, method for forming circuit pattern, and composition for forming optical member 三菱瓦斯化学株式会社 2023-09-05 CN disclosed