SCHEMBL2920205

SCHEMBL2920205

[CH2]Cc1ccc(OCCC(C)C)c(OCCC(C)C)c1

nearest known ligand 0.45

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
MRGPRX1 Q96LB2 1/20 0.44
HDAC1 Q13547 1/20 0.43
HDAC2 Q92769 1/20 0.43
SIGMAR1 Q99720 3/20 0.42
SMN1; SMN2 Q16637 2/20 0.42
KDM4E B2RXH2 2/20 0.42
ALDH1A1 P00352 2/20 0.42
TLR8 Q9NR97 1/20 0.40
HTT P42858 1/20 0.40
BIRC5 O15392 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
ESR1 P03372 1/20 0.39
GAA P10253 1/20 0.38
EPHX2 P34913 1/20 0.37
MCHR1 Q99705 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL677527 0.82 ALDH1A1 (0.56) SMN1; SMN2KDM4EALDH1A1TLR8HTT
SCHEMBL7854242 0.80 MAPT (0.49) HDAC1HDAC2SIGMAR1SMN1; SMN2KDM4E
SCHEMBL677302 0.79 BIRC5 (0.49) HDAC1HDAC2SMN1; SMN2KDM4EALDH1A1
SCHEMBL677146 0.77 BIRC5 (0.47) SMN1; SMN2HTTBIRC5
SCHEMBL17521751 0.77 MRGPRX1 (0.54) MRGPRX1HDAC1HDAC2SIGMAR1SMN1; SMN2
SCHEMBL5699333 0.76 S1PR2 (0.48) SIGMAR1SMN1; SMN2HTTBIRC5
SCHEMBL2558627 0.76 CALM1 (0.49) SMN1; SMN2KDM4EALDH1A1HTTTDP1
SCHEMBL580128 0.76 MRGPRX1 (0.56) MRGPRX1HDAC1HDAC2SIGMAR1SMN1; SMN2
Isopentyleugenol SCHEMBL3166969 0.75 ALDH1A1 (0.67) MRGPRX1SMN1; SMN2KDM4EALDH1A1HTT
SCHEMBL2841949 0.75 ALDH1A1 (0.67) MRGPRX1SMN1; SMN2KDM4EALDH1A1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-20070128547-A1 POSITIVE RESIST COMPOSITION FUJI PHOTO FILM CO., LTD. 2007-06-07 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
EP-1557720-A1 Positive resist composition and pattern formation method using the same FUJI PHOTO FILM CO., LTD. (JP) 2005-07-27 EP disclosed
EP-1467251-A1 Positive resist composition Fuji Photo Film Co., Ltd. (JP) 2004-10-13 EP disclosed
US-20040197702-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2004-10-07 US disclosed
EP-1465010-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2004-10-06 EP disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed