Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.56 |
| ▸ | GAA | P10253 | 3/20 | 0.56 |
| ▸ | MEN1 | O00255 | 2/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.42 |
| ▸ | LMNA | P02545 | 2/20 | 0.42 |
| ▸ | MAPT | P10636 | 2/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | KDM1A | O60341 | 1/20 | 0.41 |
| ▸ | IGF1R | P08069 | 1/20 | 0.40 |
| ▸ | TP53 | P04637 | 2/20 | 0.39 |
| ▸ | THRB | P10828 | 1/20 | 0.38 |
| ▸ | GPR55 | Q9Y2T6 | 1/20 | 0.38 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.37 |
| ▸ | DHODH | Q02127 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7791111 | 0.91 | ALDH1A1 (0.52) | ALDH1A1GAAMEN1KMT2ALMNA | |
| SCHEMBL2920205 | 0.82 | MRGPRX1 (0.44) | ALDH1A1GAASMN1; SMN2KDM4EHTT | |
| SCHEMBL2558627 | 0.79 | CALM1 (0.49) | ALDH1A1GAAMEN1KMT2ALMNA | |
| Hydrochloric Acid SCHEMBL9404831 | 0.77 | GAA (0.65) | ALDH1A1GAAMEN1KMT2ALMNA | |
| SCHEMBL7854242 | 0.76 | MAPT (0.49) | ALDH1A1GAAMEN1KMT2AMAPT | |
| SCHEMBL6416513 | 0.75 | MAPT (0.49) | ALDH1A1GAAMEN1KMT2ALMNA | |
| SCHEMBL13607201 | 0.75 | ALDH1A1 (0.61) | ALDH1A1GAAMEN1KMT2AMAPT | |
| SCHEMBL677302 | 0.74 | BIRC5 (0.49) | ALDH1A1MEN1KMT2ALMNAMAPT | |
| SCHEMBL580059 | 0.74 | NPC1 (0.54) | ALDH1A1GAAMEN1KMT2ALMNA | |
| SCHEMBL20314711 | 0.74 | ALDH1A1 (0.49) | ALDH1A1GAAMEN1KMT2ALMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| EP-1367439-B1 | Radiation-sensitive composition | FUJIFILM CORP (JP) | 2012-08-01 | — | — | EP | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| EP-2399168-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM Corporation (JP) | 2011-12-28 | — | — | EP | disclosed |
| WO-2010150917-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-29 | — | — | WO | disclosed |
| EP-1467251-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2010-09-08 | — | — | EP | disclosed |
| EP-1465010-B1 | Positive resist composition | FUJIFILM CORP (JP) | 2009-10-21 | — | — | EP | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7250246-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-07-31 | — | — | US | disclosed |
| EP-1465010-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2004-10-06 | — | — | EP | disclosed |
| US-6743565-B2 | POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR | FUJI PHOTO FILM CO., LTD. (JP) | 2004-06-01 | — | — | US | disclosed |
| US-6727033-B2 | A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN | FUJI PHOTO FILM CO., LTD. (JP) | 2004-04-27 | — | — | US | disclosed |
| US-6692883-B2 | GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER | FUJI PHOTO FILM CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| EP-1367439-A1 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2003-12-03 | — | — | EP | disclosed |
| US-6630280-B1 | Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness | FUJI PHOTO FILM CO., LTD. (JP) | 2003-10-07 | — | — | US | disclosed |
| US-20030134221-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-07-17 | — | — | US | disclosed |
| US-20030108811-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-06-12 | — | — | US | disclosed |
| US-20020012866-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2002-01-31 | — | — | US | disclosed |
| US-6207343-B1 | RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION | FUJI PHOTO FILM CO., LTD. (JP) | 2001-03-27 | — | — | US | disclosed |