SCHEMBL2923246

SCHEMBL2923246

C[CH]c1ccc(C2CC2)cc1

nearest known ligand 0.45

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ESR2 Q92731 12/20 0.45
▸ POLB P06746 1/20 0.39
▸ ESR1 P03372 4/20 0.38
▸ CYP3A4 P08684 2/20 0.38
▸ CYP2C9 P11712 2/20 0.38
▸ MAOA P21397 2/20 0.37
▸ MAOB P27338 2/20 0.37
▸ NPC1 O15118 1/20 0.34
▸ RAB9A P51151 1/20 0.34
▸ SPHK1 Q9NYA1 1/20 0.34
▸ SRD5A1 P18405 1/20 0.34
▸ SRD5A2 P31213 1/20 0.34
▸ CYP2D6 P10635 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2919140 0.91 ESR2 (0.42) ESR2ESR1CYP3A4CYP2C9CYP2D6
SCHEMBL676291 0.91 HDAC1 (0.41) ESR2POLBNPC1RAB9A
SCHEMBL676976 0.89 LMNA (0.41) ESR2POLBNPC1RAB9A
SCHEMBL677033 0.89 LMNA (0.41) ESR2POLBNPC1RAB9A
SCHEMBL2884020 0.78 ESR2 (0.57) ESR2POLBESR1CYP3A4CYP2C9
SCHEMBL19218160 0.75 CYP2A6 (0.44) ESR2POLBMAOAMAOB
SCHEMBL31381836 0.75 ALDH1A1 (0.55) ESR2POLBESR1CYP3A4CYP2C9
SCHEMBL741455 0.75 CYP2A6 (0.44) ESR2POLBMAOAMAOB
SCHEMBL19035788 0.75 ESR2 (0.41) ESR2POLBESR1CYP3A4CYP2C9
SCHEMBL2187090 0.74 ALDH1A1 (0.38) CYP3A4NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106660991-A Antiproliferative compounds and methods of use thereof 细胞基因公司 2017-05-10 — — CN disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 — — EP disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 — — EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 — — US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 — — US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 — — US disclosed
EP-1467251-A1 Positive resist composition Fuji Photo Film Co., Ltd. (JP) 2004-10-13 — — EP disclosed
US-20040197702-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2004-10-07 — — US disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 — — US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 — — US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 — — US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 — — US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 — — EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 — — US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 — — US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 — — US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 — — US disclosed
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