SCHEMBL2919140

SCHEMBL2919140

C[CH]c1ccc(C2CCC2)cc1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ESR2 Q92731 12/20 0.42
▸ ESR1 P03372 5/20 0.39
▸ CYP3A4 P08684 1/20 0.39
▸ CYP2D6 P10635 1/20 0.39
▸ CYP2C9 P11712 1/20 0.39
▸ HDAC1 Q13547 1/20 0.37
▸ HDAC8 Q9BY41 1/20 0.37
▸ HDAC6 Q9UBN7 1/20 0.37
▸ NOTUM Q6P988 1/20 0.34
▸ LMNA P02545 1/20 0.34
▸ HTT P42858 1/20 0.34
▸ CNR2 P34972 2/20 0.34
▸ ALDH1A1 P00352 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL676291 0.95 HDAC1 (0.41) ESR2HDAC1HDAC8HDAC6NOTUM
SCHEMBL676976 0.93 LMNA (0.41) ESR2HDAC1HDAC8HDAC6NOTUM
SCHEMBL677033 0.93 LMNA (0.41) ESR2HDAC1HDAC8HDAC6NOTUM
SCHEMBL2923246 0.91 ESR2 (0.45) ESR2ESR1CYP3A4CYP2D6CYP2C9
SCHEMBL5886587 0.80 ESR2 (0.56) ESR2ESR1CYP3A4CYP2D6CYP2C9
SCHEMBL3243130 0.79 ESR2 (0.46) ESR2ESR1CYP3A4CYP2D6CYP2C9
SCHEMBL3938368 0.77 ALDH1A1 (0.50) ESR2ESR1CYP3A4CYP2D6CYP2C9
SCHEMBL3438249 0.77 HDAC1 (0.46) ESR2ESR1CYP3A4CYP2D6CYP2C9
SCHEMBL5148273 0.77 ESR2 (0.60) ESR2ESR1CYP3A4CYP2D6CYP2C9
SCHEMBL10740141 0.76 HTT (0.44) ESR2HDAC1HDAC8HDAC6NOTUM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 — — EP disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 — — EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 — — US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 — — US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 — — US disclosed
EP-1467251-A1 Positive resist composition Fuji Photo Film Co., Ltd. (JP) 2004-10-13 — — EP disclosed
US-20040197702-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2004-10-07 — — US disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 — — US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 — — US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 — — US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 — — US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 — — EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 — — US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 — — US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 — — US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 — — US disclosed
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