SCHEMBL2930671

SCHEMBL2930671

C=CC(NNCCC[Si](OC)(OC)OC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPGD P15428 5/20 0.32
ALDH1A1 P00352 4/20 0.32
KDM4E B2RXH2 3/20 0.32
MAPT P10636 3/20 0.32
CYP3A4 P08684 3/20 0.32
MEN1 O00255 3/20 0.32
KMT2A Q03164 3/20 0.32
USP2 O75604 2/20 0.32
TP53 P04637 2/20 0.32
ALOX15 P16050 2/20 0.32
HSD17B10 Q99714 2/20 0.32
TDP1 Q9NUW8 2/20 0.32
LMNA P02545 1/20 0.32
ALOX12 P18054 1/20 0.32
SLC6A2 P23975 2/20 0.31
HTR2A P28223 1/20 0.30
HRH1 P35367 1/20 0.30
CNR1 P21554 1/20 0.30
CNR2 P34972 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2936769 0.87 HTT (0.31) ALDH1A1MAPTHTT
SCHEMBL1453093 0.86 ALDH1A1 (0.38) HPGDALDH1A1KDM4EMAPTCYP3A4
Hydrochloric Acid SCHEMBL22362253 0.85 ALDH1A1 (0.40) HPGDALDH1A1KDM4EMAPTCYP3A4
SCHEMBL645257 0.82 GRIN1 (0.35) ALDH1A1CYP3A4ALOX15TSHR
SCHEMBL10777459 0.81 ALDH1A1 (0.34) HPGDALDH1A1MAPTCYP3A4MEN1
Hydrochloric Acid SCHEMBL5894237 0.81 ALDH1A1 (0.34) ALDH1A1CYP3A4ALOX15TSHRHTT
Hydrochloric Acid SCHEMBL1475959 0.81 ALDH1A1 (0.34) ALDH1A1CYP3A4ALOX15TSHRHTT
SCHEMBL9051274 0.74 SIGMAR1 (0.32) HPGDALDH1A1CYP3A4CYP1A2TSHR
SCHEMBL336305 0.74 ALDH1A1 (0.34) ALDH1A1HTR2AHRH1
SCHEMBL5361176 0.74 ALDH1A1 (0.37) HPGDALDH1A1MAPTCYP3A4ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1296365-B1 Method of film formation JSR CORP (JP) 2010-09-22 EP disclosed
US-6890605-B2 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2005-05-10 US disclosed
US-20030059550-A1 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
EP-1296365-A2 Method of film formation, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed