SCHEMBL29403295

SCHEMBL29403295

[Ga+3].[In+3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL50633 0.82
SCHEMBL396142 0.82
SCHEMBL17763 0.82
SCHEMBL1438487 0.82
Water SCHEMBL20970284 0.82
SCHEMBL135752 0.82
SCHEMBL75118 0.82
Fluoride Ion SCHEMBL8014502 0.82
SCHEMBL9436398 0.82
Hydrochloric Acid SCHEMBL11739804 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250212698-A1 SEMICONDUCTOR-SUPERCONDUCTOR HYBRID STRUCTURE MICROSOFT TECHNOLOGY LICENSING, LLC 2025-06-26 US claimed
WO-2025136724-A1 SEMICONDUCTOR-SUPERCONDUCTOR HYBRID STRUCTURE WITH BUFFER REGION MICROSOFT TECHNOLOGY LICENSING, LLC (US) 2025-06-26 WO claimed
CN-118979270-A Preparation method of high-performance photoelectrocatalysis silicon photo-anode 电子科技大学 2024-11-19 CN claimed
US-20240349547-A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2024-10-17 US claimed
WO-2024171528-A1 SPUTTERING TARGET 三井金属鉱業株式会社 2024-08-22 WO claimed
US-11867657-B2 InGaZnO (IGZO) based system for gas detection at room temperature KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) 2024-01-09 US claimed
US-20220365022-A1 InGaZnO (IGZO) BASED SYSTEM FOR GAS DETECTION AT ROOM TEMPERATURE KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) 2022-11-17 US claimed
US-20260101496-A1 SEMICONDUCTOR MEMORY DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2026-04-09 US disclosed
US-20260082579-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-19 US disclosed
EP-4712721-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-03-18 EP disclosed
US-12562293-B2 Dielectric composition and electronic component TDK CORPORATION (JP) 2026-02-24 US disclosed
EP-4694653-A2 DISPLAY DEVICE, ADHESIVE MEMBER FORMING APPARATUS FOR DISPLAY DEVICE, ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE Samsung Display Co., Ltd. (KR) 2026-02-11 EP disclosed
US-20260007057-A1 DISPLAY DEVICE, ADHESIVE MEMBER FORMING APPARATUS FOR DISPLAY DEVICE, ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE SAMSUNG DISPLAY CO LTD (KR) 2026-01-01 US disclosed
CN-115346988-A Transistor, 3D memory, preparation method of transistor and 3D memory, and electronic equipment 北京超弦存储器研究院 2022-11-15 CN disclosed
CN-217182193-U CIGS thin film assembly based on semi-tempered glass 泰州锦能新能源有限公司 2022-08-12 CN disclosed
CN-113351827-B Metal-based metamaterial preparation method based on indirect additive manufacturing 西安交通大学 2022-08-05 CN disclosed
US-20220227673-A1 DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT TDK CORPORATION (JP) 2022-07-21 US disclosed
US-20220230776-A1 DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT TDK CORPORATION (JP) 2022-07-21 US disclosed
US-20220165802-A1 DISPLAY APPARATUS SAMSUNG DISPLAY CO., LTD. (KR) 2022-05-26 US disclosed
US-11276603-B2 Transfer method using deformable film LC SQUARE CO., LTD. (KR) 2022-03-15 US disclosed