SCHEMBL29409666

SCHEMBL29409666

Cc1ccc2c(c1)CN1CN2Cc2cc(C)ccc21

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NOTUM Q6P988 1/20 0.41
ALDH1A1 P00352 5/20 0.40
MAPT P10636 3/20 0.39
HSD17B10 Q99714 1/20 0.38
AADAT Q8N5Z0 1/20 0.38
SRD5A1 P18405 4/20 0.37
SMN1; SMN2 Q16637 2/20 0.36
HPGD P15428 1/20 0.36
TERT O14746 1/20 0.36
KDM4E B2RXH2 2/20 0.36
NPC1 O15118 1/20 0.35
RAB9A P51151 1/20 0.35
SLC6A2 P23975 1/20 0.35
SLC6A4 P31645 1/20 0.35
SLC6A3 Q01959 1/20 0.35
PDE5A O76074 1/20 0.35
HSD17B3 P37058 1/20 0.33
MCOLN3 Q8TDD5 1/20 0.33
F2 P00734 1/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2759894 1.00 NOTUM (0.41) NOTUMALDH1A1MAPTHSD17B10AADAT
Ammonia Solution, Strong SCHEMBL18320013 0.98 NOTUM (0.40) NOTUMALDH1A1MAPTHSD17B10AADAT
SCHEMBL26233074 0.87 NOTUM (0.44) NOTUMALDH1A1MAPTHSD17B10AADAT
SCHEMBL18883951 0.86 ALDH1A1 (0.39) NOTUMALDH1A1MAPTHSD17B10AADAT
SCHEMBL18883931 0.85 NOTUM (0.41) NOTUMALDH1A1MAPTAADATSMN1; SMN2
SCHEMBL112127 0.83 HSD17B10 (0.42) NOTUMALDH1A1MAPTHSD17B10AADAT
SCHEMBL24331975 0.77
SCHEMBL18363028 0.76 ALDH1A1 (0.44) NOTUMALDH1A1MAPTHSD17B10AADAT
SCHEMBL18883929 0.74 ALDH1A1 (0.42) NOTUMALDH1A1MAPTTERTNPC1
SCHEMBL19743790 0.74 ACHE (0.41) GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114690557-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-07-01 CN claimed
US-20250102910-A1 PHOTORESIST COMPOSITION AND METALLIZATION METHOD U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-03-27 US disclosed
CN-117945957-A Photoacid generating compounds and related polymers, photoresist compositions, and methods of forming photoresist relief images 罗门哈斯电子材料有限责任公司 2024-04-30 CN disclosed
CN-117916854-A Narrow line cutting mask method 杰米纳蒂奥公司 2024-04-19 CN disclosed
US-11940730-B2 Photoresist compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-03-26 US disclosed
CN-117457484-A Metallization method 罗门哈斯电子材料有限责任公司 2024-01-26 CN disclosed
US-20230311073-A1 CARBON MOLECULAR SIEVE MEMBRANES BASED ON OXYGEN-FREE POLYMERIC PRECURSORS UNIV KING ABDULLAH SCI & TECH (SA) 2023-10-05 US disclosed
EP-4204130-A1 CARBON MOLECULAR SIEVE MEMBRANES BASED ON OXYGEN-FREE POLYMERIC PRECURSORS King Abdullah University of Science and Technology (SA) 2023-07-05 EP disclosed
US-20220229366-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-07-21 US disclosed
CN-114690557-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-07-01 CN disclosed
WO-2022043981-A1 CARBON MOLECULAR SIEVE MEMBRANES BASED ON OXYGEN-FREE POLYMERIC PRECURSORS KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) 2022-03-03 WO disclosed