SCHEMBL2951960

SCHEMBL2951960

CC1(OC=O)COC(=O)C1

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
GABRP O00591 1/20 0.38
GABRD O14764 1/20 0.38
GABRA1 P14867 1/20 0.38
GABRB1 P18505 1/20 0.38
GABRG2 P18507 1/20 0.38
GABRB3 P28472 1/20 0.38
GABRA5 P31644 1/20 0.38
GABRA3 P34903 1/20 0.38
GABRA2 P47869 1/20 0.38
GABRB2 P47870 1/20 0.38
GABRA4 P48169 1/20 0.38
GABRE P78334 1/20 0.38
GABRA6 Q16445 1/20 0.38
GABRG1 Q8N1C3 1/20 0.38
GABRG3 Q99928 1/20 0.38
GABRQ Q9UN88 1/20 0.38
LMNA P02545 1/20 0.34
CYP2C9 P11712 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL383662 0.81 LMNA (0.48) LMNACYP2C9
SCHEMBL14113500 0.77
SCHEMBL2951958 0.72 GABRP (0.42) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL14509966 0.72 GABRP (0.38) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL24634134 0.71 LMNA (0.37) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL1902555 0.69 LMNA (0.33) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL1448144 0.69
SCHEMBL13817660 0.67 GABRP (0.38) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL21235010 0.67 LMNA (0.34) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL45972 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1096317-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-09-08 EP claimed
US-6737215-B2 Photoresist composition for deep ultraviolet lithography CLARIANT FINANCE (BVI) LTD (VG) 2004-05-18 US claimed
EP-1392745-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS Clariant Finance (BVI) Limited (VG) 2004-03-03 EP claimed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP claimed
US-6686429-B2 COPOLYMER OF AN ETHENICALLY UNSATURATED NITRILE-CONTAINING MONOMER AND A NONAROMATIC CYCLIC UNIT SUCH AS TERT-BUTYL NORBORENECARBOXYLATE; SENSITIVE IN DEEP ULTRAVIOLET REGION; MICROLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US claimed
US-20030013831-A1 NOVEL POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2003-01-16 US claimed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US claimed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO claimed
WO-2002092651-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO claimed
EP-2192134-B1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION, AND COMPOUND USED IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORP (JP) 2014-02-26 EP disclosed
EP-1816519-B1 Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition FUJIFILM CORP (JP) 2010-11-03 EP disclosed
EP-1392745-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS Clariant Finance (BVI) Limited (VG) 2004-03-03 EP disclosed
EP-1388027-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD. (CH) 2004-02-11 EP disclosed
US-6686429-B2 COPOLYMER OF AN ETHENICALLY UNSATURATED NITRILE-CONTAINING MONOMER AND A NONAROMATIC CYCLIC UNIT SUCH AS TERT-BUTYL NORBORENECARBOXYLATE; SENSITIVE IN DEEP ULTRAVIOLET REGION; MICROLITHOGRAPHY CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US disclosed
US-20030013831-A1 NOVEL POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. 2003-01-16 US disclosed
US-20020187419-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2002-12-12 US disclosed
WO-2002093263-A1 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO disclosed
WO-2002092651-A1 POLYMER SUITABLE FOR PHOTORESIST COMPOSITIONS CLARIANT INTERNATIONAL LTD (CH) 2002-11-21 WO disclosed