SCHEMBL296285

SCHEMBL296285

Cc1ccccc1N1C=CCC1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ADRB1 P08588 2/20 0.44
SMN1; SMN2 Q16637 2/20 0.42
ALDH1A1 P00352 1/20 0.42
HPGD P15428 1/20 0.42
ALOX5 P09917 2/20 0.40
MAPT P10636 3/20 0.39
KMT2A Q03164 2/20 0.39
MEN1 O00255 1/20 0.39
DDB1 Q16531 1/20 0.39
CRBN Q96SW2 1/20 0.39
MGLL Q99685 1/20 0.38
LMNA P02545 1/20 0.37
MCOLN3 Q8TDD5 1/20 0.37
HTR7 P34969 1/20 0.36
AKR1C3 P42330 1/20 0.35
SLC18A3 Q16572 1/20 0.35
TSHR P16473 1/20 0.35
ACHE P22303 1/20 0.35
P2RX7 Q99572 1/20 0.34
ATM Q13315 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL290576 0.89 ADRB1 (0.42) ADRB1SMN1; SMN2ALDH1A1HPGDALOX5
SCHEMBL10818264 0.78 MEN1 (0.44) SMN1; SMN2ALDH1A1MAPTKMT2AMEN1
SCHEMBL14113071 0.77 LMNA (0.44) ALOX5MAPTKMT2AMEN1MGLL
SCHEMBL23057117 0.76 KDM4E (0.34) ALDH1A1HPGDMAPTATM
SCHEMBL1156328 0.74 ALDH1A1 (0.48) ADRB1SMN1; SMN2ALDH1A1HPGDALOX5
SCHEMBL3517237 0.73 HSD17B10 (0.47) ALDH1A1HPGDMAPTKMT2AMEN1
Hydrochloric Acid SCHEMBL1155766 0.72 ALDH1A1 (0.47) ADRB1SMN1; SMN2ALDH1A1HPGDALOX5
SCHEMBL2048248 0.72 ADRB1 (0.53) ADRB1SMN1; SMN2ALDH1A1HPGDALOX5
SCHEMBL24163505 0.72 KDM4E (0.38) SMN1; SMN2ALDH1A1HPGDTSHR
Hydrochloric Acid SCHEMBL6888155 0.72 ALDH1A1 (0.49) ALDH1A1HPGDMAPTKMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2331649-B1 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORP (US) 2018-06-13 EP disclosed
CN-103080256-B Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films BASF SE 2015-06-24 CN disclosed
US-8597540-B2 Compositions for polishing silicon-containing substrates CABOT MICROELECTRONICS CORPORATION (US) 2013-12-03 US disclosed
US-20130200039-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-08-08 US disclosed
EP-2613910-A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS BASF SE (DE) 2013-07-17 EP disclosed
EP-2614122-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-07-17 EP disclosed
CN-103210047-A Aqueous polishing compositions containing N-substituted diazenium dioxides and/or N'-hydroxy-diazenium oxide salts BASF SE 2013-07-17 CN disclosed
US-8486169-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2013-07-16 US disclosed
US-20130171824-A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS BASF SE (DE) 2013-07-04 US disclosed
US-20130168348-A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS BASF SE (DE) 2013-07-04 US disclosed
WO-2010014180-A2 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORPORATION (US) 2010-02-04 WO disclosed
US-20090029633-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2009-01-29 US disclosed
US-7442645-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2008-10-28 US disclosed
US-20060196848-A1 Readily deinkable toners MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT 2006-09-07 US disclosed
US-20060144824-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-06 US disclosed
US-7071105-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-04 US disclosed
CN-1742066-A Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORP (US) 2006-03-01 CN disclosed
EP-1601735-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC Cabot Microelectronics Corporation (US) 2005-12-07 EP disclosed
WO-2004069947-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2004-08-19 WO disclosed
US-20040152309-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION 2004-08-05 US disclosed