SCHEMBL2966736

SCHEMBL2966736

O=S(=O)(Oc1ccc([S+](c2ccccc2)c2ccccc2)cc1)c1ccccc1

nearest known ligand 0.62

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.62
MAPT P10636 2/20 0.49
NPC1 O15118 2/20 0.49
RAB9A P51151 2/20 0.49
MAOB P27338 2/20 0.49
SMN1; SMN2 Q16637 4/20 0.47
CA12 O43570 2/20 0.46
CA2 P00918 2/20 0.46
ENPP3 O14638 5/20 0.44
ENPP1 P22413 5/20 0.44
ALDH1A1 P00352 4/20 0.43
ENPP2 Q13822 3/20 0.43
MEN1 O00255 1/20 0.43
KMT2A Q03164 1/20 0.43
LMNA P02545 1/20 0.42
HTT P42858 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547500 0.89 TDP1 (0.50) TDP1MAPTSMN1; SMN2CA12CA2
SCHEMBL30464071 0.89 TDP1 (0.50) TDP1MAPTNPC1RAB9AMAOB
Hydrochloric Acid SCHEMBL30464072 0.87 TDP1 (0.49) TDP1MAPTNPC1RAB9AMAOB
SCHEMBL3981798 0.85 ENPP3 (0.50) TDP1MAPTNPC1RAB9AMAOB
SCHEMBL5709631 0.85 TDP1 (0.46) TDP1MAPTSMN1; SMN2CA12CA2
SCHEMBL382761 0.82 TDP1 (0.47) TDP1MAPTSMN1; SMN2CA12CA2
SCHEMBL30584645 0.82 CA2 (0.43) TDP1MAPTNPC1RAB9ACA12
SCHEMBL7981247 0.82 TDP1 (0.73) TDP1MAPTNPC1RAB9AMAOB
SCHEMBL19146 0.82 TDP1 (0.73) TDP1MAPTNPC1RAB9AMAOB
SCHEMBL9309112 0.80 TDP1 (0.71) TDP1MAPTNPC1RAB9AMAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023113085-A1 NOVEL PHOTOACID GENERATOR, PHOTORESIST COMPOSITION, AND PHOTORESIST PATTERN FORMATION METHOD 주식회사 동진쎄미켐 2023-06-22 WO disclosed
US-8980527-B2 Pattern forming process and resist compostion SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-17 US disclosed
US-8822136-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-02 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130108960-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-7807329-B2 Photosensitive composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2010-10-05 US disclosed
US-7759045-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-20 US disclosed
US-20090004601-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 US disclosed
EP-1640804-B1 Positive-tone radiation-sensitive resin composition JSR CORP (JP) 2008-11-19 EP disclosed
US-7335457-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2008-02-26 US disclosed
US-20060078821-A1 A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication JSR CORPORATION (JP) 2006-04-13 US disclosed
EP-1640804-A2 Positive-tone radiation-sensitive resin composition JSR Corporation (JP) 2006-03-29 EP disclosed
US-6893794-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-05-17 US disclosed
US-6830868-B2 Useful as a chemically amplified resist responding to active radiation, for example ultraviolet rays such as a KrF excimer laser, ArF excimer laser, and F2 excimer laser JSR CORPORATION (JP) 2004-12-14 US disclosed
US-20040018445-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-01-29 US disclosed
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-16 US disclosed
US-20030068573-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition SRSF1, ARL1, ERCC4 TDP1 993/4885MAPT 3692/4885NPC1 3575/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.