Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.50 |
| ▸ | HTT | P42858 | 3/20 | 0.49 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.49 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.48 |
| ▸ | LMNA | P02545 | 2/20 | 0.48 |
| ▸ | PPARG | P37231 | 2/20 | 0.48 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.47 |
| ▸ | MEN1 | O00255 | 3/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.47 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.46 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.46 |
| ▸ | VDR | P11473 | 1/20 | 0.45 |
| ▸ | CA12 | O43570 | 2/20 | 0.45 |
| ▸ | CA2 | P00918 | 2/20 | 0.45 |
| ▸ | MAPT | P10636 | 1/20 | 0.45 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.44 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.44 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5709631 | 0.96 | TDP1 (0.46) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL382761 | 0.94 | TDP1 (0.47) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL2284308 | 0.94 | MEN1 (0.51) | HTTSMN1; SMN2ALDH1A1LMNAPPARG | |
| SCHEMBL6313740 | 0.91 | ALDH1A1 (0.47) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL1047078 | 0.89 | TDP1 (0.49) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL5709625 | 0.89 | MEN1 (0.48) | HTTSMN1; SMN2ALDH1A1LMNAPPARG | |
| SCHEMBL2966736 | 0.89 | TDP1 (0.62) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL384726 | 0.87 | ALDH1A1 (0.40) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL5171833 | 0.87 | ALDH1A1 (0.50) | TDP1HTTSMN1; SMN2ALDH1A1LMNA | |
| SCHEMBL6741642 | 0.87 | MEN1 (0.54) | TDP1HTTSMN1; SMN2ALDH1A1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| EP-2662727-B1 | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-08-14 | — | — | EP | disclosed |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-21 | — | — | US | disclosed |
| EP-3348542-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-07-18 | — | — | EP | disclosed |
| EP-2808736-B1 | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2018-07-18 | — | — | EP | disclosed |
| EP-1830228-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20060078821-A1 | A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication | JSR CORPORATION (JP) | 2006-04-13 | — | — | US | disclosed |
| EP-1640804-A2 | Positive-tone radiation-sensitive resin composition | JSR Corporation (JP) | 2006-03-29 | — | — | EP | disclosed |
| US-6818379-B2 | SULFONIUM SALT REPRESENTED BY THE FOLLOWING FORMULA (I): WHEREIN Q1, Q2 AND Q3 EACH INDEPENDENTLY REPRESENT HYDROGEN, HYDROXY, ALKYL HAVING 1 TO 6 CARBON ATOMS, OR ALKOXY HAVING 1 TO 6 CARBON ATOMS, BUT ALL OF Q1, Q2 AND Q3 ARE NOT THE SAME; | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-11-16 | — | — | US | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| US-20030148211-A1 | Sulfonium salt and use thereof | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-08-07 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-6468714-B2 | FINE PHOTORESIST PATTERNS | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | TDP1 3122/4885HTT 3331/4885SMN1; SMN2 4801/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | TDP1 3114/4885HTT 3454/4885SMN1; SMN2 4809/4885 |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C5, C1R | TDP1 3114/4885HTT 3454/4885SMN1; SMN2 4809/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | TDP1 3114/4885HTT 3454/4885SMN1; SMN2 4809/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | TDP1 3669/4885HTT 2440/4885SMN1; SMN2 2279/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.