Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 4/20 | 0.71 |
| ▸ | MEN1 | O00255 | 3/20 | 0.71 |
| ▸ | CES2 | O00748 | 1/20 | 0.68 |
| ▸ | CES1 | P23141 | 1/20 | 0.68 |
| ▸ | TP53 | P04637 | 1/20 | 0.66 |
| ▸ | POLB | P06746 | 1/20 | 0.64 |
| ▸ | MAPT | P10636 | 1/20 | 0.64 |
| ▸ | BLM | P54132 | 1/20 | 0.64 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.64 |
| ▸ | TSHR | P16473 | 2/20 | 0.64 |
| ▸ | NPC1 | O15118 | 2/20 | 0.61 |
| ▸ | RAB9A | P51151 | 2/20 | 0.61 |
| ▸ | THRA | P10827 | 1/20 | 0.60 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.58 |
| ▸ | HPGD | P15428 | 2/20 | 0.58 |
| ▸ | LMNA | P02545 | 1/20 | 0.57 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.57 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29508878 | 1.00 | KMT2A (0.71) | KMT2AMEN1CES2CES1TP53 | |
| Hydrochloric Acid SCHEMBL2045145 | 0.98 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| Hydrochloric Acid SCHEMBL2045143 | 0.98 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL11060904 | 0.87 | KMT2A (0.73) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL10355 | 0.84 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL434822 | 0.84 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL13168473 | 0.84 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL4494074 | 0.84 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL6959553 | 0.84 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 | |
| SCHEMBL432613 | 0.84 | KMT2A (0.69) | KMT2AMEN1CES2CES1TP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240319601-A1 | METHOD OF FORMING PATTERNS | SAMSUNG SDI CO., LTD. (KR) | 2024-09-26 | — | — | US | claimed |
| CN-117597628-A | Method for forming pattern | 三星SDI株式会社 | 2024-02-23 | — | — | CN | claimed |
| US-20240019784-A1 | METAL CONTAINING PHOTORESIST DEVELOPER COMPOSITION, AND METHOD OF FORMING PATTERNS INCLUDING STEP OF DEVELOPING USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2024-01-18 | — | — | US | claimed |
| CN-117348341-A | Metal-containing photoresist developer composition and pattern forming method | 三星SDI株式会社 | 2024-01-05 | — | — | CN | claimed |
| WO-2023003215-A1 | METHOD OF FORMING PATTERNS | 삼성에스디아이 주식회사 | 2023-01-26 | — | — | WO | claimed |
| US-20240319601-A1 | METHOD OF FORMING PATTERNS | SAMSUNG SDI CO., LTD. (KR) | 2024-09-26 | — | — | US | disclosed |
| CN-117597628-A | Method for forming pattern | 三星SDI株式会社 | 2024-02-23 | — | — | CN | disclosed |
| US-20240019784-A1 | METAL CONTAINING PHOTORESIST DEVELOPER COMPOSITION, AND METHOD OF FORMING PATTERNS INCLUDING STEP OF DEVELOPING USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2024-01-18 | — | — | US | disclosed |
| CN-117348341-A | Metal-containing photoresist developer composition and pattern forming method | 三星SDI株式会社 | 2024-01-05 | — | — | CN | disclosed |
| CN-115697974-A | Imidazole 3-oxide derivative based ACSS2 inhibitors and methods of use thereof | 美特波米德有限公司 | 2023-02-03 | — | — | CN | disclosed |
| WO-2023003215-A1 | METHOD OF FORMING PATTERNS | 삼성에스디아이 주식회사 | 2023-01-26 | — | — | WO | disclosed |
| EP-2331649-B1 | METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES | CABOT MICROELECTRONICS CORP (US) | 2018-06-13 | — | — | EP | disclosed |
| EP-1601735-A1 | METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC | Cabot Microelectronics Corporation (US) | 2005-12-07 | — | — | EP | disclosed |
| WO-2004069947-A1 | METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC | CABOT MICROELECTRONICS CORPORATION (US) | 2004-08-19 | — | — | WO | disclosed |
| US-20040152309-A1 | Method of polishing a silicon-containing dielectric | CABOT MICROELECTRONICS CORPORATION | 2004-08-05 | — | — | US | disclosed |
| CN-1073571-C | Dialkyl tin compound of mononuclear aromatic heterocycle hydroxamate and its synthesis | UNIV SHANXI (CN) | 2001-10-24 | — | — | CN | disclosed |
| CN-1073566-C | Binuclear aromatic, heterocyclic monoacyl hydroxamic acid dialkyl-tin compounds, and method for synthesizing same | UNIV SHANXI (CN) | 2001-10-24 | — | — | CN | disclosed |
| CN-1242369-A | Binuclear aromatic, heterocyclic monoacyl hydroxamic acid dialkyl-tin compounds, and method for synthesizing same | UNIV SHANXI (CN) | 2000-01-26 | — | — | CN | disclosed |
| CN-1238338-A | Dialkyl tin compound of mononuclear aromatic heterocycle hydroxamate and its synthesis | UNIV SHANXI (CN) | 1999-12-15 | — | — | CN | disclosed |
| US-5030717-A | Binding site which bind to reactant ligand, stabilization | SCRIPPS CLINIC AND RESEARCH FOUNDATION (US) | 1991-07-09 | — | — | US | disclosed |