SCHEMBL29904875

SCHEMBL29904875

CCCC(=O)CC(=O)OOCC.CCCC(=O)CC(=O)OOCC.[Zr]

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.39
MGAM O43451 1/20 0.34
GAA P10253 1/20 0.34
SI P14410 1/20 0.34
MGAM2 Q2M2H8 1/20 0.34
HDAC3 O15379 4/20 0.33
HDAC1 Q13547 4/20 0.33
HDAC2 Q92769 4/20 0.33
HDAC8 Q9BY41 4/20 0.33
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33
CTSD P07339 1/20 0.32
FFAR3 O14843 3/20 0.32
TSHR P16473 3/20 0.32
FAAH O00519 1/20 0.31
HAO1 Q9UJM8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31434548 1.00 ALDH1A1 (0.39) ALDH1A1MGAMGAASIMGAM2
SCHEMBL4619662 0.96 ALDH1A1 (0.39) ALDH1A1MGAMGAASIMGAM2
SCHEMBL30534806 0.96 ALDH1A1 (0.39) ALDH1A1MGAMGAASIMGAM2
SCHEMBL4145593 0.87 FFAR3 (0.39) ALDH1A1HDAC3HDAC1HDAC2HDAC8
SCHEMBL31434757 0.86 ALDH1A1 (0.38) ALDH1A1HDAC3HDAC1HDAC2HDAC8
SCHEMBL6138440 0.86 ALDH1A1 (0.38) ALDH1A1HDAC3HDAC1HDAC2HDAC8
SCHEMBL30469216 0.83 ALDH1A1 (0.39) ALDH1A1MGAMGAASIMGAM2
SCHEMBL487230 0.82 FAAH (0.39) ALDH1A1CES2CES1TSHRFAAH
SCHEMBL5441284 0.82 FAAH (0.39) ALDH1A1CES2CES1TSHRFAAH
SCHEMBL4151255 0.82 ALDH1A1 (0.38) ALDH1A1HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
CN-113785243-B Composition for resist pattern metallization process 日产化学株式会社 2025-05-02 CN disclosed
CN-119768742-A Composition for forming silicon-containing resist underlayer film 日产化学株式会社 2025-04-04 CN disclosed
CN-119563142-A Composition for forming silicon-containing resist underlayer film containing multifunctional sulfonic acid 日产化学株式会社 2025-03-04 CN disclosed
CN-119487453-A Method for manufacturing laminate and method for manufacturing semiconductor element 日产化学株式会社 2025-02-18 CN disclosed
US-20240419073-A1 ADDITIVE-CONTAINING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2024-12-19 US disclosed
CN-115362216-B Composition for forming film 日产化学株式会社 2024-07-19 CN disclosed
CN-118159910-A Additive-containing silicon-containing resist underlayer film forming composition 日产化学株式会社 2024-06-07 CN disclosed
WO-2024063044-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-03-28 WO disclosed
CN-117716295-A Composition for forming silicon-containing resist underlayer film and silicon-containing resist underlayer film 日产化学株式会社 2024-03-15 CN disclosed
WO-2023037979-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, MULTILAYER BODY USING SAID COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 日産化学株式会社 2023-03-16 WO disclosed
WO-2023008507-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2023-02-02 WO disclosed
WO-2022260154-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2022-12-15 WO disclosed
WO-2022255210-A1 ADHESIVE AGENT COMPOSITION, ADHESIVE AGENT, AND SURFACE PROTECTION FILM 日東電工株式会社 2022-12-08 WO disclosed
WO-2022230940-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2022-11-03 WO disclosed
WO-2022210954-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION 日産化学株式会社 2022-10-06 WO disclosed
WO-2022210262-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE 日産化学株式会社 2022-10-06 WO disclosed
WO-2022210901-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2022-10-06 WO disclosed
WO-2022210944-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION 日産化学株式会社 2022-10-06 WO disclosed
WO-2022210960-A1 COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION 日産化学株式会社 2022-10-06 WO disclosed