SCHEMBL29968016

SCHEMBL29968016

O=Cc1ccc2ccc3c(O)ccc4ccc1c2c43

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.43
MEN1 O00255 1/20 0.43
NPC1 O15118 1/20 0.43
HSP90AA1 P07900 1/20 0.43
IDO1 P14902 1/20 0.43
RAB9A P51151 1/20 0.43
KMT2A Q03164 1/20 0.43
NPSR1 Q6W5P4 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
ERN1 O75460 9/20 0.40
TRIM24 O15164 1/20 0.39
TRIM33 Q9UPN9 1/20 0.39
ESR1 P03372 2/20 0.37
ESR2 Q92731 2/20 0.37
APP P05067 1/20 0.35
MAPT P10636 1/20 0.35
THRB P10828 1/20 0.35
HPGD P15428 1/20 0.35
ALOX15 P16050 1/20 0.35
TSHR P16473 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18605752 1.00 KDM4E (0.43) KDM4EMEN1NPC1HSP90AA1IDO1
SCHEMBL4444202 0.87 CCR1 (0.43) KDM4EMEN1NPC1HSP90AA1IDO1
SCHEMBL4441470 0.87 CCR1 (0.43) KDM4EMEN1NPC1HSP90AA1IDO1
SCHEMBL25272810 0.82 ERN1 (0.40) MEN1NPC1RAB9AKMT2ANPSR1
SCHEMBL21972841 0.80 ESR2 (0.37) MEN1IDO1KMT2AESR1ESR2
SCHEMBL16144679 0.80 HSD17B10 (0.50) IDO1L3MBTL1APPMAPTTHRB
SCHEMBL22170101 0.80 HSD17B10 (0.50) IDO1L3MBTL1APPMAPTTHRB
SCHEMBL30849786 0.80 HSD17B10 (0.50) IDO1L3MBTL1APPMAPTTHRB
Pyrene SCHEMBL20472222 0.79 ALDH1A1 (0.48) KDM4EMEN1KMT2AL3MBTL1MAPT
SCHEMBL52121 0.79 ALDH1A1 (0.48) KDM4EMEN1KMT2AL3MBTL1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118502198-A Hard mask composition, hard mask layer and method of forming pattern 三星SDI株式会社 2024-08-16 CN disclosed
EP-3653573-B1 SURFACE-MODIFIED INORGANIC NITRIDE, COMPOSITION, THERMALLY CONDUCTIVE MATERIAL, DEVICE PROVIDED WITH THERMALLY CONDUCTIVE LAYER FUJIFILM CORP (JP) 2024-08-14 EP disclosed
US-20220315790-A1 HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS SAMSUNG SDI CO., LTD. (KR) 2022-10-06 US disclosed