SCHEMBL30045892

SCHEMBL30045892

OCCc1ccc(O)c(O)c1O

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 3/20 0.43
▸ ALDH1A1 P00352 3/20 0.43
▸ GAA P10253 2/20 0.43
▸ MAPT P10636 2/20 0.43
▸ ALOX5 P09917 1/20 0.43
▸ BACE1 P56817 1/20 0.43
▸ ESR2 Q92731 2/20 0.39
▸ ESR1 P03372 1/20 0.39
▸ ADORA3 P0DMS8 1/20 0.39
▸ NPY1R P25929 1/20 0.39
▸ PTGS2 P35354 1/20 0.39
▸ OPRD1 P41143 1/20 0.39
▸ MTOR P42345 1/20 0.39
▸ HK2 P52789 1/20 0.39
▸ CYP3A4 P08684 1/20 0.39
▸ CYP2C9 P11712 1/20 0.39
▸ THPO P40225 1/20 0.39
▸ HSD17B10 Q99714 1/20 0.39
▸ PRKCI P41743 1/20 0.38
▸ TYR P14679 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2989003 1.00 KDM4E (0.43) KDM4EALDH1A1GAAMAPTALOX5
SCHEMBL2976454 0.86 TYR (0.44) KDM4EALDH1A1ESR2ESR1ADORA3
SCHEMBL272405 0.82 TYR (0.48) PRKCITYR
SCHEMBL2639710 0.81 KDM4E (0.40) KDM4EALDH1A1GAAMAPTALOX5
SCHEMBL28938776 0.79 ERCC1 (0.41) KDM4EALDH1A1GAAMAPTALOX5
SCHEMBL2510833 0.79 KDM4E (0.42) KDM4EALDH1A1GAAMAPTESR2
SCHEMBL30046415 0.78 IAPP (0.57) KDM4EALDH1A1MAPTCYP3A4HSD17B10
SCHEMBL5463172 0.78 TAAR1 (0.52) KDM4EALDH1A1MAPTMTORTHPO
SCHEMBL5445936 0.78 PRKCI (0.60) ALOX5PRKCITYR
SCHEMBL1951548 0.78 IAPP (0.57) KDM4EALDH1A1MAPTCYP3A4HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120136703-A Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2025-06-13 — — CN disclosed
CN-120136704-A Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2025-06-13 — — CN disclosed
US-20220348698-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND, AS WELL AS METHOD FOR PRODUCING IODINE-CONTAINING VINYL POLYMER AND ACETYLATED DERIVATIVE THEREOF MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-11-03 — — US disclosed
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