SCHEMBL3024016

SCHEMBL3024016

CCO[CH]C1CCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2699137 0.97 SHBG (0.32)
SCHEMBL3020072 0.95
SCHEMBL3021255 0.89
SCHEMBL4499268 0.78 ADH1A (0.35)
SCHEMBL4494360 0.77 POLB (0.33)
SCHEMBL4489680 0.75 CYP1A2 (0.40)
SCHEMBL4488797 0.73 CYP1A2 (0.39)
SCHEMBL2770468 0.73 SHBG (0.30)
SCHEMBL22589043 0.72 ALDH1A1 (0.39)
SCHEMBL4488362 0.72 EPHX1 (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104281006-B Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2019-01-22 CN claimed
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN claimed
CN-103102251-B Radiation-ray sensitive composition MITSUBISHI GAS CHEMICAL INC. (JP) 2016-01-20 CN claimed
CN-104281006-A Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO 2015-01-14 CN claimed
CN-101528653-B Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO 2013-09-11 CN claimed
CN-105264440-B Anti-corrosion agent composition 三菱瓦斯化学株式会社 2019-09-24 CN disclosed
CN-104281006-B Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2019-01-22 CN disclosed
CN-109154777-A Resist lower membrane, which is formed, uses composition, lower layer film for lithography and pattern forming method 三菱瓦斯化学株式会社 2019-01-04 CN disclosed
CN-109073782-A Optical element forms composition and its solidfied material 三菱瓦斯化学株式会社 2018-12-21 CN disclosed
CN-108137478-A Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method 三菱瓦斯化学株式会社 2018-06-08 CN disclosed
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-107949808-A Lower layer film for lithography forms material, lower layer film for lithography is formed with composition, lower layer film for lithography and its manufacture method, pattern formation method, resin and purification process 三菱瓦斯化学株式会社 2018-04-20 CN disclosed
EP-2194983-A1 COMPOUNDS WHICH HAVE ACTIVITY AT M1 RECEPTOR AND THEIR USES IN MEDICINE Glaxo Group Limited (GB) 2010-06-16 EP disclosed
EP-2194982-A1 COMPOUNDS WHICH HAVE ACTIVITY AT M1 RECEPTOR AND THEIR USES IN MEDICINE Glaxo Group Limited (GB) 2010-06-16 EP disclosed
CN-101528653-A Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2009-09-09 CN disclosed
WO-2009037296-A1 COMPOUNDS WHICH HAVE ACTIVITY AT M1 RECEPTOR AND THEIR USES IN MEDICINE GLAXO GROUP LIMITED (GB) 2009-03-26 WO disclosed
WO-2009037294-A1 COMPOUNDS WHICH HAVE ACTIVITY AT M1 RECEPTOR AND THEIR USES IN MEDICINE GLAXO GROUP LIMITED (GB) 2009-03-26 WO disclosed
CN-101088046-A Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2007-12-12 CN disclosed
CN-1853141-A Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2006-10-25 CN disclosed
CN-1517794-A Resist composition 三菱瓦斯化学株式会社 2004-08-04 CN disclosed