SCHEMBL3071307

SCHEMBL3071307

O=C(O)c1c(O)c(CC2CO2)c(C(=O)O)c(O)c1CC1CO1

nearest known ligand 0.32

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
FEN1 P39748 1/20 0.32
TP53 P04637 1/20 0.30
HBB P68871 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
LDHA P00338 1/20 0.30
LDHB P07195 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29031707 0.85 TP53 (0.33) TP53HBBSMN1; SMN2
SCHEMBL795247 0.82 TP53 (0.31) TP53HBBSMN1; SMN2
SCHEMBL27142378 0.82 TP53 (0.31) TP53HBBSMN1; SMN2
SCHEMBL3080712 0.80 HTT (0.33) TP53HBBSMN1; SMN2
SCHEMBL3076528 0.79 HMGB1 (0.33) LDHALDHB
SCHEMBL3069660 0.79 HMGB1 (0.36) LDHALDHB
SCHEMBL3063452 0.78 HTT (0.32)
SCHEMBL1643688 0.78 ALDH1A1 (0.31) LDHALDHB
SCHEMBL28356020 0.78
SCHEMBL3068519 0.78 ALDH1A1 (0.31) LDHALDHB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-20140170567-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 EP disclosed
CN-103649835-A Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL IND LTD 2014-03-19 CN disclosed
CN-101523292-B Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD 2013-04-10 CN disclosed
US-7790356-B2 Condensation type polymer-containing anti-reflective coating for semiconductor NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-09-07 US disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed