SCHEMBL3076528

SCHEMBL3076528

O=C(O)c1cc(CC2CO2)c(O)c(CC2CO2)c1C(=O)O

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
HMGB1 P09429 2/20 0.33
CXCL12 P48061 2/20 0.33
ME2 P23368 1/20 0.32
ME1 P48163 1/20 0.32
ME3 Q16798 1/20 0.32
ALDH1A1 P00352 1/20 0.31
HPGD P15428 1/20 0.31
HSD17B10 Q99714 1/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
LDHA P00338 1/20 0.30
LDHB P07195 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7727731 0.88 KDM4E (0.32)
SCHEMBL3069660 0.85 HMGB1 (0.36) HMGB1CXCL12ME2ME1ME3
SCHEMBL3074823 0.84 NOTUM (0.33) HMGB1CXCL12MEN1KMT2ALDHA
SCHEMBL1644711 0.84
SCHEMBL6689310 0.82 HMGB1 (0.31) HMGB1CXCL12ME2ME1ME3
SCHEMBL1644098 0.81
SCHEMBL1007226 0.81 LDHA (0.33) HMGB1CXCL12MEN1KMT2ALDHA
SCHEMBL3076191 0.80 PKM (0.32) ALDH1A1
SCHEMBL3071307 0.79 FEN1 (0.32) LDHALDHB
SCHEMBL1007227 0.79 NOTUM (0.35) HMGB1CXCL12ALDH1A1HPGDHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-20140170567-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 EP disclosed
US-7790356-B2 Condensation type polymer-containing anti-reflective coating for semiconductor NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-09-07 US disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed