SCHEMBL3082765

SCHEMBL3082765

O=C(O)c1c2ccccc2c(C(=O)OCC2CO2)c2ccccc12

nearest known ligand 0.58

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DHFR P00374 1/20 0.49
MGLL Q99685 6/20 0.49
L3MBTL1 Q9Y468 1/20 0.44
TDP1 Q9NUW8 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29678491 0.94 DHFR (0.53) DHFRMGLLL3MBTL1TDP1
SCHEMBL1714293 0.94 DHFR (0.53) DHFRMGLLL3MBTL1TDP1
SCHEMBL25314656 0.82 ALDH1A1 (0.46) DHFRMGLLL3MBTL1
SCHEMBL25285163 0.82 ALDH1A1 (0.46) DHFRMGLLL3MBTL1
SCHEMBL1373567 0.81 DHFR (0.49) DHFRMGLL
SCHEMBL23466923 0.81 DHFR (0.54) DHFRMGLLL3MBTL1TDP1
SCHEMBL1715144 0.80 DHFR (0.59) DHFRMGLLL3MBTL1TDP1
SCHEMBL31530692 0.80 DHFR (0.59) DHFRMGLLL3MBTL1TDP1
Benzoic Acid 2,3-Epoxypropyl Ester SCHEMBL5604855 0.79 NPC1 (0.56) MGLLTDP1
Benzoic Acid 2,3-Epoxypropyl Ester SCHEMBL21245419 0.79 NPC1 (0.56) MGLLTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
CN-114761876-A Composition for forming resist underlayer film 日产化学株式会社 2022-07-15 CN disclosed
CN-114746468-A Method for producing polymer 日产化学株式会社 2022-07-12 CN disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-20140170567-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 EP disclosed
US-7790356-B2 Condensation type polymer-containing anti-reflective coating for semiconductor NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-09-07 US disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed