Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.55 |
| ▸ | TSHR | P16473 | 2/20 | 0.54 |
| ▸ | HTT | P42858 | 1/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.50 |
| ▸ | KMT2A | Q03164 | 7/20 | 0.49 |
| ▸ | MEN1 | O00255 | 6/20 | 0.49 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.49 |
| ▸ | LMNA | P02545 | 1/20 | 0.49 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.49 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.48 |
| ▸ | MAPT | P10636 | 3/20 | 0.48 |
| ▸ | CA12 | O43570 | 1/20 | 0.48 |
| ▸ | BRD4 | O60885 | 1/20 | 0.48 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.48 |
| ▸ | CA1 | P00915 | 1/20 | 0.48 |
| ▸ | CA2 | P00918 | 1/20 | 0.48 |
| ▸ | MB | P02144 | 1/20 | 0.48 |
| ▸ | CYP1A1 | P04798 | 1/20 | 0.48 |
| ▸ | CA3 | P07451 | 1/20 | 0.48 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL415828 | 0.77 | ESR1 (0.39) | SMN1; SMN2TSHRALDH1A1CA2CYP3A4 | |
| SCHEMBL3150538 | 0.77 | SMN1; SMN2 (0.60) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A | |
| SCHEMBL29622962 | 0.75 | AOC3 (0.67) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A | |
| SCHEMBL274924 | 0.75 | TSHR (0.79) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A | |
| SCHEMBL29622963 | 0.75 | AOC3 (0.67) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A | |
| SCHEMBL22089643 | 0.75 | KMT2A (0.63) | SMN1; SMN2L3MBTL1KMT2AMEN1LMNA | |
| SCHEMBL19514709 | 0.74 | MEN1 (0.61) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A | |
| SCHEMBL861674 | 0.74 | SMN1; SMN2 (0.84) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A | |
| SCHEMBL13790478 | 0.74 | LMNA (0.50) | SMN1; SMN2KMT2AMEN1LMNAALDH1A1 | |
| SCHEMBL6078584 | 0.74 | PTPN1 (0.57) | SMN1; SMN2TSHRHTTL3MBTL1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9268229-B2 | Composition for forming resist underlayer film, and pattern-forming method | JSR CORPORATION (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9250526-B2 | Composition for forming resist underlayer film, and pattern-forming method | JSR CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-20150355546-A1 | COMPOSITION FOR SILICON-CONTAINING FILM FORMATION, PATTERN-FORMING METHOD, AND POLYSILOXANE COMPOUND | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-9170492-B2 | Silicon-containing film-forming composition, silicon-containing film, and pattern forming method | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9140985-B2 | — | — | 2015-09-22 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| EP-2615497-A1 | RESIST PATTERN FORMING METHOD | JSR Corporation (JP) | 2013-07-17 | — | — | EP | disclosed |
| US-20130130179-A1 | POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-23 | — | — | US | disclosed |
| US-20130107235-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| WO-2013061601-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | WO | disclosed |
| US-20130101942-A1 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| EP-2579304-A1 | INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS | JSR Corporation (JP) | 2013-04-10 | — | — | EP | disclosed |
| US-20130084394-A1 | INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL | JSR CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20100233632-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD | JSR CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100178620-A1 | INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |