SCHEMBL31210331

SCHEMBL31210331

CC(C)(C)c1ccc([I+]c2ccc(C(C)(C)C)cc2)cc1.O=S(=O)([O-])c1ccccc1C(F)(F)F

nearest known ligand 0.47

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 10/20 0.47
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
SLC22A12 Q96S37 6/20 0.40
FFAR1 O14842 1/20 0.40
FFAR4 Q5NUL3 1/20 0.40
CYP2C9 P11712 2/20 0.39
SLC22A6 Q4U2R8 2/20 0.39
SLC22A8 Q8TCC7 2/20 0.39
SLC22A11 Q9NSA0 2/20 0.39
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39
CYP3A4 P08684 1/20 0.39
ALDH1A1 P00352 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL453146 1.00 HSD11B1 (0.47) HSD11B1MEN1KMT2ASLC22A12FFAR1
SCHEMBL2898439 0.91 HSD11B1 (0.46) HSD11B1MEN1KMT2ASLC22A12CYP2C9
Toliodium SCHEMBL2901082 0.87 SLC22A12 (0.47) HSD11B1MEN1KMT2ASLC22A12FFAR4
SCHEMBL5405451 0.87 HSD11B1 (0.43) HSD11B1MEN1KMT2ASLC22A12CYP2C9
SCHEMBL455243 0.86 MEN1 (0.46) HSD11B1MEN1KMT2ASLC22A12CYP2C9
SCHEMBL4419124 0.84 KDM1A (0.44) HSD11B1MEN1KMT2ASLC22A12CYP2C9
SCHEMBL5416321 0.83 HSD11B1 (0.39) HSD11B1MEN1KMT2ASLC22A12CYP2C9
SCHEMBL5422186 0.83 FFAR4 (0.41) HSD11B1MEN1KMT2ASLC22A12FFAR4
SCHEMBL5445938 0.83 HSD11B1 (0.47) HSD11B1MEN1KMT2ASLC22A12FFAR1
SCHEMBL2966140 0.82 HSD11B1 (0.43) HSD11B1CA1CA2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
CN-119422108-A Resist composition and method for forming resist film using same 三菱瓦斯化学株式会社 2025-02-11 CN disclosed
CN-113402666-B Dental photocurable composition excellent in color tone selectivity 株式会社松风 2024-11-15 CN disclosed
US-20240369925-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed