Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 2/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.46 |
| ▸ | SLC22A12 | Q96S37 | 13/20 | 0.45 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.44 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.43 |
| ▸ | SLC22A6 | Q4U2R8 | 2/20 | 0.43 |
| ▸ | SLC22A8 | Q8TCC7 | 2/20 | 0.43 |
| ▸ | SLC22A11 | Q9NSA0 | 2/20 | 0.43 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | KAT6A | Q92794 | 1/20 | 0.40 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2898439 | 0.89 | HSD11B1 (0.46) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| SCHEMBL2898422 | 0.88 | GAA (0.51) | KMT2ASLC22A12ALDH1A1GAA | |
| SCHEMBL2901137 | 0.88 | ALDH1A1 (0.41) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| Toliodium SCHEMBL2901082 | 0.88 | SLC22A12 (0.47) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| SCHEMBL4419124 | 0.88 | KDM1A (0.44) | MEN1KMT2ASLC22A12CYP2C9SLC22A6 | |
| SCHEMBL31210331 | 0.86 | HSD11B1 (0.47) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| SCHEMBL453146 | 0.86 | HSD11B1 (0.47) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| Potassium Ion SCHEMBL3783668 | 0.86 | MEN1 (0.55) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| Silver SCHEMBL6114988 | 0.86 | MEN1 (0.55) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 | |
| Lithium Ion SCHEMBL28930014 | 0.86 | MEN1 (0.55) | MEN1KMT2ASLC22A12ALDH1A1CYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 330 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11970557-B2 | Polymer containing photoacid generator | LG CHEM, LTD. (KR) | 2024-04-30 | — | — | US | disclosed |
| EP-3010943-B1 | CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM | CANON KK (JP) | 2024-04-03 | — | — | EP | disclosed |
| CN-117769684-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2024-03-26 | — | — | CN | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11681227-B2 | Enhanced EUV photoresist materials, formulations and processes | IRRESISTIBLE MATERIALS LTD (GB) | 2023-06-20 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11592605-B2 | Color developing structure having concave-convex layer, method for producing such structure, and display | TOPPAN PRINTING CO., LTD. (JP) | 2023-02-28 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| EP-1164433-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-20010023050-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-09-20 | — | — | US | disclosed |
| US-6280900-B1 | RADIATION SENSITIVE COMPOSITION WITH ALKALINE DEVELOPER SOLUBLE IN POLYMER COATED ON SUBSTRATE | JSR CORPORATION (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1122605-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| US-6143460-A | PHOTOACID GENERATOR PROVIDING IMPROVED PHOTORESIST RESOLUTION | JSR CORPORATION (JP) | 2000-11-07 | — | — | US | disclosed |
| US-6136500-A | CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION | JSR CORPORATION (JP) | 2000-10-24 | — | — | US | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |
| EP-0959389-A1 | Diazodisulfone compound and radiation-sensitive resin composition | JSR Corporation (JP) | 1999-11-24 | — | — | EP | disclosed |
| EP-0898201-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-02-24 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | MEN1 1260/4885KMT2A 2526/4885SLC22A12 2482/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | MEN1 1512/4885KMT2A 633/4885SLC22A12 3649/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.