⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL116500 | 0.76 | DPP4 (0.35) | — | |
| SCHEMBL3148416 | 0.75 | — | — | |
| SCHEMBL3143689 | 0.74 | — | — | |
| SCHEMBL9492152 | 0.74 | SLC6A3 (0.39) | — | |
| SCHEMBL3148811 | 0.71 | — | — | |
| SCHEMBL27583776 | 0.70 | KCNH2 (0.32) | — | |
| SCHEMBL5556290 | 0.70 | ALDH1A1 (0.33) | — | |
| SCHEMBL27724075 | 0.68 | MMP2 (0.36) | — | |
| SCHEMBL27744908 | 0.68 | — | — | |
| SCHEMBL3148563 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7825042-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2010-11-02 | — | — | US | claimed |
| US-20100081291-A1 | Very Low Dielectric Constant Plasma-Enhanced CVD Films | APPLIED MATERIALS, INC. (US) | 2010-04-01 | — | — | US | claimed |
| US-7012030-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS INC. (US) | 2006-03-14 | — | — | US | claimed |
| US-20040235291-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2004-11-25 | — | — | US | claimed |
| US-6541367-B1 | Plasma vapor deposition; oxidation of organosilicon compound | APPLIED MATERIALS, INC. | 2003-04-01 | — | — | US | claimed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | claimed |
| US-20190186046-A1 | POROUS SURFACE FOR BIOMEDICAL DEVICES | APPLIED MATERIALS INC (US) | 2019-06-20 | — | — | US | disclosed |
| US-7825042-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2010-11-02 | — | — | US | disclosed |
| US-20100081291-A1 | Very Low Dielectric Constant Plasma-Enhanced CVD Films | APPLIED MATERIALS, INC. (US) | 2010-04-01 | — | — | US | disclosed |
| US-7633163-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2009-12-15 | — | — | US | disclosed |
| US-7611996-B2 | Multi-stage curing of low K nano-porous films | APPLIED MATERIALS, INC. (US) | 2009-11-03 | — | — | US | disclosed |
| US-7601631-B2 | Very low dielectric constant plasma-enhanced CVD films | APPPLIED MATERIALS, INC. (US) | 2009-10-13 | — | — | US | disclosed |
| US-7547643-B2 | Techniques promoting adhesion of porous low K film to underlying barrier layer | APPLIED MATERIALS, INC. (US) | 2009-06-16 | — | — | US | disclosed |
| US-20050227502-A1 | Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity | APPLIED MATERIALS, INC. (US) | 2005-10-13 | — | — | US | disclosed |
| US-20050136240-A1 | Very low dielectric constant plasma-enhanced CVD films | MANDAL ROBERT P (US) | 2005-06-23 | — | — | US | disclosed |
| US-6890639-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2005-05-10 | — | — | US | disclosed |
| US-20040061236-A1 | Semiconductor device provided with a dielectric film including porous structure and manufacturing method thereof | SANYO ELECTRIC CO., LTD. | 2004-04-01 | — | — | US | disclosed |
| US-6596627-B2 | Reacting an organosilicon compound and a non-silicon compound comprising a cyclic ring at conditions sufficient to retain the ring in an intermediate dielectric layer, and converting it to a dispersed void. | APPLIED MATERIALS INC. | 2003-07-22 | — | — | US | disclosed |
| US-6541367-B1 | Plasma vapor deposition; oxidation of organosilicon compound | APPLIED MATERIALS, INC. | 2003-04-01 | — | — | US | disclosed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | disclosed |