SCHEMBL3154441

SCHEMBL3154441

CCCCOC(=O)Oc1ccc([S+]2CCCC2)c2ccccc12

nearest known ligand 0.44

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ELANE P08246 4/20 0.44
TSHR P16473 5/20 0.40
TDP1 Q9NUW8 2/20 0.40
L3MBTL1 Q9Y468 2/20 0.40
CNR1 P21554 3/20 0.39
CNR2 P34972 3/20 0.39
ALDH1A1 P00352 5/20 0.36
HSD17B10 Q99714 2/20 0.36
KDM4E B2RXH2 2/20 0.36
GAA P10253 1/20 0.36
CYP3A4 P08684 2/20 0.36
MAPK1 P28482 2/20 0.36
TP53 P04637 1/20 0.36
CYP2C9 P11712 1/20 0.36
LMNA P02545 1/20 0.35
TYMS P04818 1/20 0.35
SLC2A1 P11166 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3872145 0.93 ALDH1A1 (0.37) ELANETSHRL3MBTL1CNR1CNR2
Trifluoromethanesulfonic Acid SCHEMBL645685 0.90 ELANE (0.40) ELANETSHRTDP1L3MBTL1CNR1
SCHEMBL3872104 0.88 TYMS (0.45) TSHRTDP1L3MBTL1ALDH1A1HSD17B10
SCHEMBL3163307 0.85 ELANE (0.36) ELANECNR1CNR2SLC2A1
SCHEMBL23271888 0.84 ELANE (0.57) ELANETSHRTDP1L3MBTL1CNR1
SCHEMBL3971521 0.84 ELANE (0.36) ELANESLC2A1
Trifluoromethanesulfonic Acid SCHEMBL6564792 0.83 ELANE (0.44) ELANEL3MBTL1CNR1CNR2LMNA
Trifluoromethanesulfonic Acid SCHEMBL646751 0.83 MMP2 (0.33) ELANECNR1CNR2ALDH1A1TYMS
SCHEMBL106524 0.82 CNR1 (0.45) TDP1L3MBTL1CNR1CNR2GAA
SCHEMBL29429149 0.82 CNR1 (0.45) TDP1L3MBTL1CNR1CNR2GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1225480-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-03-17 EP disclosed
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20080187859-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-08-07 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7297461-B2 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-11-20 US disclosed
EP-1736829-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-12-27 EP disclosed
EP-1726608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-11-29 EP disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed